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V = -10 V, I = -6 A D DS(on) GS produced using Fairchild Semiconductors proprietary planar Low Gate Charge (Typ. 21 nC) stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Crss (Typ. 80 pF) resistance, and to provide superior switching performance and 100% Avalanche Tested high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. S D G G I-PAK S D-PAK G D S D Absolute Maximum Ratings TC = 25C unless otherwise noted. Symbol Parameter FQD17P06 / FQU17P06 Unit V Drain-Source Voltage -60 V DSS I - Continuous (T = 25C) Drain Current -12 A D C - Continuous (T = 100C) -7.6 A C I Drain Current - Pulsed (Note 1) -48 A DM V Gate-Source Voltage 25 V GSS E (Note 2) Single Pulsed Avalanche Energy 300 mJ AS I Avalanche Current (Note 1) -12 A AR E (Note 1) Repetitive Avalanche Energy 4.4 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt -7.0 V/ns Power Dissipation (T = 25C) * 2.5 W P A D Power Dissipation (T = 25C) 44 W C - Derate above 25C 0.35 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering purposes, T 300 C L 1/8 from case for 5 seconds. Thermal Characteristics Symbol Parameter FQD17P06 / FQU17P06 Unit R Thermal Resistance, Junction-to-Case, Max. 2.85 JC R Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W JA 2 R Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 JA * When mounted on the minimum pad size recommended (PCB Mount) www.fairchildsemi.com 2001 Fairchild Semiconductor Corporation 1 FQD17P06 / FQU17P06 Rev C 3