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V = 10 V, DS(on) GS produced using Fairchild Semiconductors proprietary planar I = 0.5 A D stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 5.5 nC) technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance Low Crss (Typ. 2.7 pF) and high avalanche energy strength. These devices are 100% Avalanche Tested suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D D G S I-PAK D-PAK G G D S S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter FQD1N80 TM / FQU1N80TU Unit V Drain-Source Voltage 800 V DSS I - Continuous (T = 25C) Drain Current 1.0 A D C - Continuous (T = 100C) 0.63 A C I (Note 1) Drain Current - Pulsed 4.0 A DM V Gate-Source Voltage 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 90 mJ AS I Avalanche Current (Note 1) 1.0 A AR E Repetitive Avalanche Energy (Note 1) 4.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns Power Dissipation (T = 25C) * P 2.5 W A D Power Dissipation (T = 25C) 45 W C - Derate above 25C 0.36 W/C T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum lead temperature for soldering, T 300 C L 1/8 rom case for 5 seconds Thermal Characteristics Symbol Parameter Unit FQD1N80TM / FQU1N80TU R Thermal Resistance, Junction to Case, Max. 2.78 JC o Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 C/W R JA 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. 50 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FQD1N80 / FQU1N80 Rev. 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