Motion SPM 5 Series FSB50325A, FSB50325AT, FSB50325AS General Description The FSB50325A/AT/AS is an advanced Motion SPM 5 module providing a fullyfeatured, highperformance inverter output stage www.onsemi.com for AC Induction, BLDC and PMSM motors. These modules integrate optimized gate drive of the builtin MOSFETs (FRFET technology) to minimize EMI and losses, while also providing multiple onmodule SPM5E 023 / 23LD, protection features including undervoltage lockouts and thermal PDD STD, FULL PACK, monitoring. The builtin highspeed HVIC requires only a single DIP TYPE supply voltage and translates the incoming logiclevel gate inputs to CASE MODEJ the highvoltage, highcurrent drive signals required to properly drive the modules internal MOSFETs. Separate opensource MOSFET terminals are available for each phase to support the widest variety of control algorithms. SPM5G 023 / 23LD, PDD STD, FULL PACK, Features DOUBLE DIP TYPE (BSH) UL Certified No. E209204 (UL1557) CASE MODEL 250 V R = 1.7 (Max) FRFET MOSFET 3Phase Inverter DS(on) with Gate Drivers and Protection Builtin Bootstrap Diodes Simplify PCB Layout Separate OpenSource Pins from LowSide MOSFETs for SPM5H 023 / 23LD, ThreePhase CurrentSensing PDD STD, SPM23 BD (Ver1.5) SMD TYPE ActiveHIGH Interface, Works with 3.3 / 5 V Logic, Schmitttrigger CASE MODEM Input Optimized for Low Electromagnetic Interference HVIC TemperatureSensing Builtin for Temperature Monitoring HVIC for Gate Driving and UnderVoltage Protection MARKING DIAGRAM Isolation Rating: 1500 Vrms / 1 min. Y Moisture Sensitive Level (MSL) 3 FSB50325AS FSB50325x These Devices are PbFree and are RoHS Compliant &Z&K&E&E&E&3 Applications 3Phase Inverter Driver for Small Power AC Motor Drives Y = ON Semiconductor Logo FSB50325x = Specific Device Code (x = A, AT, AS) Related Source &Z = Assembly Plant Code RDFSB50450A Reference Design for Motion SPM 5 Series Ver.2 &K = 2Digits Lot Run Traceability Code AN9082 Motion SPM5 Series Thermal Performance by Contact &E = Designate Space &3 = 3Digits Data Code Format Pressure AN9080 Users Guide for Motion SPM 5 Series V2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: October, 2019 Rev. 3 FSB50325A/DFSB50325A, FSB50325AT, FSB50325AS ORDERING INFORMATION Device Device Marking Package Shipping FSB50325A FSB50325A SPM5E023 270 / Tube (PbFree) FSB50325AT FSB50325AT SPM5G023 180 / Tube (PbFree) FSB50325AS FSB50325AS SPM5H023 450 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Condition 1 Rating Unit INVERTER PART (each MOSFET unless otherwise specified.) V DrainSource Voltage of Each MOSFET 250 V DSS *I Each MOSFET Drain Current, Continuous T = 25C 1.7 A D 25 C *I Each MOSFET Drain Current, Continuous T = 80C 1.3 A D 80 C *I Each MOSFET Drain Current, Peak T = 25C, PW < 100 ms 4.4 A C DP *I Each MOSFET Drain Current, Rms T = 80C, F < 20 kHz 0.9 A DRMS C PWM rms *P Maximum Power Dissipation T = 25C, For Each MOSFET 12.3 W D C CONTROL PART (each HVIC unless otherwise specified.) V Control Supply Voltage Applied Between V and COM 20 V CC CC V Highside Bias Voltage Applied Between V and V 20 V BS B S V Input Signal Voltage Applied Between IN and COM 0.3~V + 0.3 V IN CC BOOTSTRAP DIODE PART (each bootstrap diode unless otherwise specified.) V Maximum Repetitive Reverse Voltage 250 V RRMB * I Forward Current T = 25C 0.5 A FB C * I Forward Current (Peak) T = 25C, Under 1 ms Pulse Width 1.5 A FPB C THERMAL RESISTANCE R Junction to Case Thermal Resistance Each MOSFET under Inverter Operating 10.2 C/W JC Condition (Note 1) TOTAL SYSTEM T Operating Junction Temperature 40~150 C J T Storage Temperature 40~125 C STG V Isolation Voltage 60 Hz, Sinusoidal, 1 Minute, Connect Pins to 1500 V ISO rms Heat Sink Plate Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. For the measurement point of case temperature T , please refer to Figure 4. C 2. Marking * is calculation value or design factor. www.onsemi.com 2