DATA SHEET www.onsemi.com 8-Pin DIP High Speed PDIP8 6.6x3.81, 2.54P Transistor Optocouplers CASE 646BW 8 1 Single-Channel: 6N135M, PDIP8 9.655x6.61, 2.54P 6N136M, HCPL4503M CASE 646CQ 8 Dual-Channel: HCPL2530M, 1 HCPL2531M PDIP8 GW 8 CASE 709AC Description 1 The 6N135M, 6N136M, HCPL4503M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically PDIP8 GW 8 CASE 709AD coupled to a high speed photodetector transistor for each channel. 1 A separate connection for the bias of the photodiode improves the speed by several orders of magnitude over conventional phototransistor optocouplers by reducing the base collector capacitance of the input transistor. MARKING DIAGRAM The HCPL4503M has no internal connection to the phototransistor base for improved noise immunity. An internal noise shield provides ON superior common mode rejection of up to 50,000 V/ s. 6N135 VXXYYB Features 6N135 = Device Number High Speed 1 MBit/s V = DIN EN/IEC6074755 Option (only DualChannel: HCPL2530M, HCPL2531M appears on component ordered with this CTR Guaranteed 0C to 70C option) XX = Two Digit Year Code, e.g., 15 No Base Connection for Improved Noise Immunity (HCPL4503M) YY = Two Digit Work Week Ranging from 01 to Superior CMR of 15,000 V/ s Minimum (HCPL4503M) 53 B = Assembly Package Code Safety and Regulatory Approvals UL1577, 5,000 VAC for 1 Minute RMS DIN EN/IEC6074755 These are PbFree Devices ORDERING INFORMATION See detailed ordering and shipping information on page 11 of Applications this data sheet. Line Receivers Pulse Transformer Replacement Output Interface to CMOSLSTTLTTL WideBandwidth Analog Coupling Related Resources SingleChannel: 6N135M, 6N136M, HCPL4503M Dual Channel: HCPL2530M, HCPL2531M SCHEMATICS V N/C 1 8 + 1 8 V CC CC V F1 V + 2 7 2 7 V B O1 V F V 3 6 3 6 V O O2 V F2 + N/C 4 5 GND 4 5 GND 6N135M, 6N136M, HCPL2530M, HCPL4503M HCPL2531M Pin 7 is not connected in the HCPL4503M Figure 1. Schematics SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 V IIV RMS <300 V IIV RMS <450 V IIII RMS <600 V IIII RMS Climatic Classification 40/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1,335 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1,669 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 890 V IORM peak V Highest Allowable OverVoltage 6,000 V IOTM peak External Creepage 8.0 mm External Clearance 7.4 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10.16 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 150 C S I Input Current (Note 1) 200 mA S,INPUT P Output Power (Duty Factor 2.7%) (Note 1) 300 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) >10 IO S IO 1. Safety limit value maximum values allowed in the event of a failure. www.onsemi.com 2