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Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 20 V CEO V Emitter-Base Voltage 4 V EBO I Collector Current 20 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10 A, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 20 V CEO C B BV Emitter-Base Breakdown Voltage I =10 A, I =0 4 V EBO E C I Collector Cut-off Current V =30V, I =0 0.1 A CBO CB E I Emitter Cut-off Current V =4V, I =0 0.1 A EBO EB C h DC Current Gain V =6V, I =1mA 40 240 FE CE C V (on) Base-Emitter On Voltage V =6V, I =1mA 0.72 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.1 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =1mA 400 600 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 1.2 pF ob CB E C Collector-Base Time Constant V =6V, I =1mA 12 15 ps crbb CE C f=31.9MHz NF Noise Figure V =6V, I =1mA 3.0 5.0 dB CE C R =50 , f=100MHz S h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120~ 240 FE 2002 Fairchild Semiconductor Corporation Rev. B2, November 2002