LV5061VGEVB ON Semiconductor

Ordering number : ENA1829A LV5061V Bi-CMOS IC Low power consumption and LV5061V Recommended Operating Conditions at Ta = 25C Parameter Symbol Conditions Ratings Unit Input voltage range V 4.5 to 18 V IN Electrical Characteristics at Ta = 25C, V = 15V IN Ratings Parameter Symbol Conditions Unit min typ max Reference voltage Internal reference voltage Vref 1.235 1.260 1.285 V Pch drive voltage V I =0 to -5mA V -5.5 V-5.0 V -4.5 V PDR OUT IN IN IN Saw wave oscillator Oscillatory frequency F RT=470k 280330 380kHz OSC ON/OFF circuit IC start-up voltage V 1.5 V V CNT_ON IN Disable voltage V 0.3 V CNT_OFF Soft start circuit Soft start source current I_SC EN>1.5V 1.32.0 2.7 A SS Soft start sink current I_SK EN>1.5V, I >RSNS 1.2 2.0 2.8 mA SS LIM SS=4V at HICCUP UVLO circuit UVLO release voltage V FB=COMP 3.0 3.4 3.8 V UVLON UVLO lock voltage V FB=COMP 2.5 2.9 3.3 V UVLOF Error amplifier Input bias current I_IN -100 -50 100nA EA Error amplifier gain G 100 250 400 A/V EA Output sink current I_OSK FB=1.75V -40 -20 -10 A EA Output source current I_OSC FB=0.75V 10 20 40 A ES Over current limit circuit Reference current I1 48.4 55 61.6 A LIM Over current detection V -5 +5 mV LIM_OFS comparator offset voltage RSNS pin input range V V-0.175 V V RSNS IN IN HICCUP timer start-up cycle N 15 cycle LCYCLES HICCUP comparator threshold V 1.2 1.26 1.32V tHIC voltage HICCUP timer change current I 12 3 A HIC PWM comparator Maximum On-duty D max 95 % Logic output Power good L sink current I _L PG=5V 4 5 6 mA PWRGD Power good H leakage current I _H PG=5V 1 A PWRGD Power good threshold voltage V 1.0 1.1 1.2V tPG Power good hysteresis V_H 40 50 60mV PG Output Output on-resistance (High) RH 3 ON Output on-resistance (Low) RL 3 ON Output on-current (High) IH 500 mA ON Output on-current (Low) IL 500 mA ON The entire device Stand-by current I EN<0.3V 1 A CCS Light load mode consumption I 1 EN>1.5V, 50 70 90 A SLEEP current No switching Thermal shutdown TSD *2 170 C *2: Design certification No.A1829-2/6