Product Information

LV51131T-TLM-E

LV51131T-TLM-E electronic component of ON Semiconductor

Datasheet
Battery Management BATTERY PROTECTION IC

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3349 ea
Line Total: USD 2.33

143 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

LV51131T-TLM-E
ON Semiconductor

1 : USD 1.61
10 : USD 1.449
100 : USD 1.1029
500 : USD 0.9281
1000 : USD 0.7981
2000 : USD 0.728
10000 : USD 0.7176
24000 : USD 0.6946

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Product Type
Battery Type
Output Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Series
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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LV51131T 2-Cell Lithium-Ion Secondary Battery Protection IC www.onsemi.com Overview The LV5131T is a protection IC for 2-cell lithium-ion secondary batteries. Features Monitoring Function for Each Cell: Detects overcharge and over-discharge conditions and controls the charging and discharging operation of each cell. MSOP8 CASE 846AH High Detection Voltage Accuracy: Over-charge detection accuracy 25 mV Over-discharge detection accuracy 100 mV MARKING DIAGRAM Hysteresis Cancel Function: The hysteresis of over-discharge detection voltage is decreased by sensing the connection of a load after overcharging has been 51131 detected. YMWL Discharge Current Monitoring Function: Detects over-currents, load shorting, and excessively high voltage of a charger and regulates charging and discharging operations. Low Current Consumption: 51131 = Specific Device Code Normal operation mode typ. 6.0 A Y = Year of Production Stand by mode max. 0.2 A M = Assembly Operation Month WL = Wafer Lot Number 0 V Cell Charging Function: Charging is enabled even when the cell voltage is 0 V by giving a potential difference between the V pin and V pin. DD PIN ASSIGNMENT D TV Sense OUT C 8 7 6 5 1 2 3 4 V C V V DD OUT SS (Top View) ORDERING INFORMATION Device Package Shipping LV51131TTLME MSOP8 2,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: January, 2019 Rev. 2 LV51131T/DLV51131T Specifications ABSOLUTE MAXIMUM RATINGS (T = 25C) A Parameter Symbol Conditions Ratings Unit Power Supply Voltage V 0.3 to +12 V DD Input Voltage V V Charger Minus Voltage V 28 to V +0.3 DD DD Output Voltage Cout Pin Voltage Vcout V 28 to V +0.3 V DD DD Dout Pin Voltage Vdout V 0.3 to V +0.3 V SS DD Allowable Power Dissipation Pd max Independent IC 170 mW Operating Ambient Temperature Topr 30 to +85 C Storage Temperature Tstg 40 to +125 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Absolute maximum rating shows the permission level that must not surpass even for an instant. 2. Even if LV521131T was used within the absolute maximum rating, if it operate frequently on high temperature and high current or high voltage or great temperature changes in succession, reliability might decrease. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Operation input voltage Vcell V V between voltage 1.5 10 V DD SS 0 V cell charging minimum Vmin V V = 0, 1.5 V DD SS operation voltage V V between voltage DD Over-charge detection voltage Vd1 4.325 4.350 4.375 V Ta = 045C (Note 4) 4.315 4.350 4.385 V Over-charge release voltage Vr1 VM Vd3 4.100 4.150 4.200 V VM > Vd3 4.250 4.360 V Over-charge detection delay time td1 V Vc = 3.5 V 4.5 V, 0.5 1.0 1.5 s DD Vc V = 3.5 V SS Over-charge release delay time tr1 V Vc = 4.5 V 3.5 V, 20.0 40.0 60.0 ms DD Vc V = 3.5 V SS Over-discharge detection voltage Vd2 2.20 2.30 2.40 V Over-discharge release hysteresis Vh2 10.0 20.0 40.0 mV voltage Over-discharge detection delay td2 V Vc = 3.5 V 2.2 V, 50 100 150 ms DD time Vc V = 3.5 V SS Over-discharge release delay time tr2 V Vc = 2.2 V 3.5 V, 0.5 1.0 1.5 ms DD Vc V = 3.5 V SS Over-current detection voltage Vd3 V Vc = 3.5 V, Vc V = 3.5 V 0.130 0.150 0.170 V DD SS Over-current release hysteresis Vh3 V Vc = 3.5 V, Vc V = 3.5 V 5.0 10.0 20.0 mV DD SS voltage Overcurrent detection delay time td3 V Vc = 3.5 V, Vc V = 3.5 V 10.0 20.0 30.0 ms DD SS Shortcurrent release delay time tr3 V Vc = 3.5 V, Vc V = 3.5 V 0.5 1.0 1.5 ms DD SS Short circuit detection voltage Vd4 V Vc = 3.5 V, Vc V = 3.5 V 1.0 1.3 1.6 V DD SS Short circuit detection delay time td4 V Vc = 3.5 V, Vc V = 3.5 V 0.125 0.250 0.500 ms DD SS Excessive charger detection Vd5 V Vc = 3.5 V, Vc V = 3.5 V 0.60 0.45 0.30 V DD SS voltage (V ) V between voltage SS Release hysteresis voltage Vh5 V Vc = 3.5 V, Vc V = 3.5 V 25.0 50.0 100.0 mV DD SS www.onsemi.com 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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