M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the M1MA151KT1, M1MA152KT1 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I M1MA151KT1 V = 35 V 0.1 Adc R R M1MA152KT1 V = 75 V 0.1 R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V Vdc M1MA151KT1 I = 100 A 40 R R M1MA152KT1 80 Diode Capacitance C V = 0, f = 1.0 MHz 2.0 pF D R Reverse Recovery Time (Figure 1) t (Note 2) I = 10 mA, V = 6.0 V, 3.0 ns rr F R R = 100 , I = 0.1 I L rr R 2. t Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE t r t t p rr I F t t 10% R L I = 0.1 I A rr R 90% I = 10 mA F V = 6 V R V R R = 100 L t = 2 s p t = 0.35 ns r Figure 1. Reverse Recovery Time Equivalent Test Circuit ORDERING INFORMATION Device Package Shipping M1MA151KT1 SC 59 3000 Units / Tape & Reel M1MA151KT1G SC 59 3000 Units / Tape & Reel (Pb Free) M1MA152KT1 SC 59 3000 Units / Tape & Reel M1MA152KT1G SC 59 3000 Units / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.