Product Information

M1MA151KT1G

M1MA151KT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SS SWCH DIO 40V TR
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2415 ea
Line Total: USD 0.24

13375 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
13142 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

M1MA151KT1G
ON Semiconductor

1 : USD 0.2415
10 : USD 0.1679
100 : USD 0.069
1000 : USD 0.0483
3000 : USD 0.0368
9000 : USD 0.0311
24000 : USD 0.0287
45000 : USD 0.0265

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the M1MA151KT1, M1MA152KT1 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I M1MA151KT1 V = 35 V 0.1 Adc R R M1MA152KT1 V = 75 V 0.1 R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V Vdc M1MA151KT1 I = 100 A 40 R R M1MA152KT1 80 Diode Capacitance C V = 0, f = 1.0 MHz 2.0 pF D R Reverse Recovery Time (Figure 1) t (Note 2) I = 10 mA, V = 6.0 V, 3.0 ns rr F R R = 100 , I = 0.1 I L rr R 2. t Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE t r t t p rr I F t t 10% R L I = 0.1 I A rr R 90% I = 10 mA F V = 6 V R V R R = 100 L t = 2 s p t = 0.35 ns r Figure 1. Reverse Recovery Time Equivalent Test Circuit ORDERING INFORMATION Device Package Shipping M1MA151KT1 SC 59 3000 Units / Tape & Reel M1MA151KT1G SC 59 3000 Units / Tape & Reel (Pb Free) M1MA152KT1 SC 59 3000 Units / Tape & Reel M1MA152KT1G SC 59 3000 Units / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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