MB6S ON Semiconductor

DATA SHEET www.onsemi.com Bridge Rectifiers, 0.5 A MB1S-MB8S Description SOIC4 W The MB family of bridge rectifiers is a 0.5 A rectifier family that CASE 751EP achieves high surge current absorption within a very small foot print. 2 Within its small 35 mm form factor, the MB family shines in its surge MARKING DIAGRAM capability. In order to absorb high surge currents, the design supports 2 2 a35A I rating and a 5.0 A Sec I T rating. Devices in the family FSM are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little + extra surge capability. Y&Z&3 For higher I current ratings, lower profile packaging, or lower FAV MB*S V values, explore the onsemi MDB family of bridge rectifiers. For F improved V and efficiency values in the MB package or even higher F surge capability, ask about onsemis pending MBxSV family. Features Y = Logo LowLeakage &Z = Assembly Plant Code Surge Overload Rating: 35 A peak &3 = 3Digit Data Code (Year & Week) MB*S = Specific Device Code Ideal for Printed Circuit Board * = 1/2/4/6/8 UL Certified: UL E258596 This Device is PbFree and RoHS Compliant ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: August, 2021 Rev. 5 MB8S/DMB1SMB8S ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted) A Symbol Parameter MB1S MB2S MB4S MB6S MB8S Unit V Maximum Repetitive Reverse Voltage 100 200 400 600 800 V RRM V Maximum RMS Bridge Input Voltage 70 140 280 420 560 V RMS V DC Reverse Voltage (Rated V ) 100 200 400 600 800 V R R I Average Rectified Forward Current at T = 50C 0.5 A A F(AV) I NonRepetitive Peak Forward Surge Current: 35 A FSM 8.3 ms Single HalfSineWave T Storage Temperature Range 55 to +150 C STG T Operating Junction Temperature Range 55 to +150 C J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Value Unit P Power Dissipation 1.4 W D Thermal Resistance, Junction to Ambient, per Leg (Note 1) C/W R 85 JA Thermal Resistance, Junction to Lead, per Leg (Note 1) C/W R 20 JL 1. Device mounted on PCB with 0.5 0.5 inch (13 13 mm) lead length. ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted) A Symbol Parameter Conditions Value Unit V Forward Voltage, per Bridge I = 0.5 A 1.0 V F F I Reverse Current, per Leg at Rated V R R T = 25C 5.0 A A T = 125C 0.5 mA A 2 2 2 I t I t Rating for Fusing A s t < 8.3 ms 5.0 C Total Capacitance, per Leg V = 4.0 V, f = 1.0 MHz 13 pF T R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping MB1S MB1S SOIC4 W 3,000 / Tape & Reel (PbFree) MB2S MB2S MB4S MB4S MB6S MB6S MB8S MB8S For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2