Product Information

MBR4045PT

MBR4045PT electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers 41 amp Rectifiers Schottky Barrier

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 361
Multiples : 361

Stock Image

MBR4045PT
ON Semiconductor

361 : USD 1.1679
N/A

Obsolete
0 - Global Stock

MOQ : 900
Multiples : 900

Stock Image

MBR4045PT
ON Semiconductor

900 : USD 1.4583
1800 : USD 1.4463
N/A

Obsolete
0 - Global Stock

MOQ : 1500
Multiples : 1500

Stock Image

MBR4045PT
ON Semiconductor

1500 : USD 3.0571
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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MBR4045PT SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage MBR4045PT MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage V 45 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 125C) Per Diode 20 R C Per Device 40 Peak Repetitive Forward Current, I 40 A FRM (Rated V , Square Wave, 20 kHz R T = 90C) Per Diode C NonRepetitive Peak Surge Current I 400 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current, I 2.0 A RRM (2.0 s, 1.0 kHz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature (Note 1) T 65 to +175 C J Peak Surge Junction Temperature T 175 C J(pk) (Forward Current Applied) Voltage Rate of Change dv/dt 10,000 V/ s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, JunctiontoCase Minimum Pad R 1.4 JC C/W Maximum Thermal Resistance, JunctiontoAmbient Minimum Pad R 55 JA ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Instantaneous Forward Voltage (Note 2) V V F (i = 20 A, T = 25C) 0.53 0.70 F J (i = 20 A, T = 125C) 0.46 0.60 F J (i = 40 A, T = 25C) 0.64 0.80 F J (i = 40 A, T = 125C) 0.62 0.75 F J Instantaneous Reverse Current (Note 2) i mA R (Rated DC Voltage, T = 25C) 0.09 1.0 J (Rated DC Voltage, T = 125C) 30 50 J

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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