MC74HC151A 8-Input Data Selector/Multiplexer HighPerformance SiliconGate CMOS The MC74HC151 is identical in pinout to the LS151. The device www.onsemi.com inputs are compatible with standard CMOS outputs with pullup resistors, they are compatible with LSTTL outputs. MARKING This device selects one of the eight binary Data Inputs, as DIAGRAMS 16 determined by the Address Inputs. The Strobe pin must be at a low SOIC16 level for the selected data to appear at the outputs. If Strobe is high, the HC151AG D SUFFIX 16 Y output is forced to a low level and the Y output is forced to a high AWLYWW CASE 751B 1 level. 1 The HC151 is similar in function to the HC251 which has 3state 16 outputs. TSSOP16 HC 16 Features 151A DT SUFFIX ALYW CASE 948F Output Drive Capability: 10 LSTTL Loads 1 Outputs Directly Interface to CMOS, NMOS, and TTL 1 Operating Voltage Range: 2 to 6 V A = Assembly Location WL, L = Wafer Lot Low Input Current: 1 A YY, Y = Year High Noise Immunity Characteristic of CMOS Devices WW, W = Work Week G or = PbFree Package NLV Prefix for Automotive and Other Applications Requiring (Note: Microdot may be in either location) Unique Site and Control Change Requirements AECQ100 Qualified and PPAP Capable PIN ASSIGNMENT These are PbFree Devices D3 1 16 V CC 2 15 D4 D2 4 D0 3 14 D5 D1 3 D1 4 13 D6 D0 5 2 Y D2 5 12 D7 Y 1 D3 DATA DATA 6 11 15 Y A0 INPUTS D4 OUTPUTS 14 6 7 10 STROBE A1 D5 Y 13 GND A2 D6 8 9 12 D7 FUNCTION TABLE 11 A0 Inputs Outputs ADDRESS 10 A1 A2 A1 A0 Strobe Y Y INPUTS 9 A2 XX X H L H 7 STROBE L L L L D0 D0 L L H L D1 D1 PIN 16 = V CC L H L L D2 D2 PIN 8 = GND L H H L D3 D3 Figure 1. Logic Diagram H L L L D4 D4 H L H L D5 D5 H H L L D6 D6 H H H L D7 D7 D0, D1, , D7 = the level of the respective D input. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 3 MC74HC151A/DMC74HC151A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V fields. However, precautions must in CC be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated voltages to this highimpedance cir- I DC Input Current, per Pin 20 mA in cuit. For proper operation, V and in I DC Output Current, per Pin 25 mA out V should be constrained to the out range GND (V or V ) V . I DC Supply Current, V and GND Pins 50 mA in out CC CC CC Unused inputs must always be P Power Dissipation in Still Air SOIC Package 500 mW D tied to an appropriate logic voltage TSSOP Package TBD level (e.g., either GND or V ). CC Unused outputs must be left open. T Storage Temperature 65 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 2) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit 55 to V CC V 25C 85C 125C Symbol Parameter Test Conditions Unit V Minimum HighLevel Input V = 0.1 V or V 0.1 V 2.0 1.5 1.5 1.5 V IH out CC Voltage 4.5 3.15 3.15 3.15 I 20 A out 6.0 4.2 4.2 4.2 V Maximum LowLevel Input V = 0.1 V or V 0.1 V 2.0 0.3 0.3 0.3 V IL out CC Voltage I 20 A 4.5 0.9 0.9 0.9 out 6.0 1.2 1.2 1.2 V Minimum HighLevel Output V V = V or V 2.0 1.9 1.9 1.9 OH in IH IL Voltage 4.5 4.4 4.4 4.4 I 20 A out 6.0 5.9 5.9 5.9 V = V I 4.0 mA 4.5 3.98 3.84 3.70 in IH out I 5.2 mA 6.0 5.48 5.34 5.20 out V Maximum LowLevel Output V = V or V 2.0 0.1 0.1 0.1 V OL in IH IL Voltage I 20 A 4.5 0.1 0.1 0.1 out 6.0 0.1 0.1 0.1 V = V or V I 4.0 mA 4.5 0.26 0.33 0.40 in IH IL out I 5.2 mA 6.0 0.26 0.33 0.40 out I Maximum Input Leakage Current V = V or GND 6.0 0.1 1.0 1.0 A in in CC I Maximum Quiescent Supply V = V or GND 6.0 8 80 160 A CC in CC Current (per Package) I = 0 A out www.onsemi.com 2