MC74VHC08 Quad 2-Input AND Gate The MC74VHC08 is an advanced high speed CMOS 2input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer www.onsemi.com output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. MARKING DIAGRAMS Features 14 14 High Speed: t = 4.3 ns (Typ) at V = 5.0 V PD CC 1 VHC08G Low Power Dissipation: I = 2.0 A (Max) at T = 25C CC A SOIC14 AWLYWW High Noise Immunity: V = V = 28% V D SUFFIX NIH NIL CC CASE 751A Power Down Protection Provided on Inputs 1 Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range Low Noise: V = 0.8 V (Max) 14 14 OLP Pin and Function Compatible with Other Standard Logic Families VHC 08 1 Latchup Performance Exceeds 300 mA ALYW TSSOP ESD Performance: DT SUFFIX 1 Human Body Model > 2000 V CASE 948G Machine Model > 200 V Chip Complexity: 24 FETs or 6 Equivalent Gates A = Assembly Location NLV Prefix for Automotive and Other Applications Requiring WL, L = Wafer Lot Y = Year Unique Site and Control Change Requirements AECQ100 WW, W = Work Week Qualified and PPAP Capable G or = PbFree Package These Devices are PbFree and are RoHS Compliant (Note: Microdot may be in either location) 1 A1 3 Y1 2 B1 4 FUNCTION TABLE A2 6 Y2 5 Inputs Output B2 Y = AB AB Y 9 A3 8 L L L Y3 10 B3 L H L 12 H L L A4 11 Y4 H H H 13 B4 Figure 1. Logic Diagram V B4 A4 Y4 B3 A3 Y3 CC ORDERING INFORMATION 14 13 12 11 10 9 8 See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 1 2 34567 A1 B1 Y1 A2 B2 Y2 GND (Top View) Figure 2. Pinout: 14Lead Packages Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2017 Rev. 11 MC74VHC08/DMC74VHC08 MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to +7.0 V fields. However, precautions must in be taken to avoid applications of any V DC Output Voltage 0.5 to V +0.5 V out CC voltage higher than maximum rated I Input Diode Current 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in I Output Diode Current 20 mA OK V should be constrained to the out range GND (V or V ) V . I DC Output Current, per Pin 25 mA out in out CC Unused inputs must always be I DC Supply Current, V and GND Pins 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). P Power Dissipation in Still Air, SOIC Package 500 mW CC D 450 Unused outputs must be left open. TSSOP Package T Storage Temperature 65 to +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage 0 V V out CC T Operating Temperature 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC 0 20 V = 5.0 V 0.5 V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS T = 25C T = 55C to 125C A A V CC V Min Typ Max Min Max Symbol Parameter Test Conditions Unit V Minimum HighLevel 2.0 1.50 1.50 V IH Input Voltage 3.0 to 5.5 V x 0.7 V x 0.7 CC CC V Maximum LowLevel 2.0 0.50 0.50 V IL Input Voltage 3.0 to 5.5 V x 0.3 V x 0.3 CC CC V Minimum HighLevel V = V or V 2.0 1.9 2.0 1.9 V OH in IH IL Output Voltage 3.0 2.9 3.0 2.9 I = 50 A OH 4.5 4.4 4.5 4.4 V = V or V in IH IL 3.0 2.58 2.48 I = 4.0 mA OH 4.5 3.94 3.80 I = 8.0 mA OH V Maximum LowLevel V V = V or V 2.0 0.0 0.1 0.1 OL in IH IL Output Voltage 3.0 0.0 0.1 0.1 I = 50 A OL 4.5 0.0 0.1 0.1 V = V or V in IH IL 3.0 0.36 0.44 I = 4.0 mA OL 4.5 0.36 0.44 I = 8.0 mA OL I Maximum Input V = 5.5 V or GND 0 to 5.5 0.1 1.0 A in in Leakage Current I Maximum Quiescent V = V or GND 5.5 2.0 20.0 A CC in CC Supply Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2