MICROFJ-30035-TSV-TR ON Semiconductor

MICROFJ-30035-TSV-TR electronic component of ON Semiconductor
MICROFJ-30035-TSV-TR ON Semiconductor
MICROFJ-30035-TSV-TR Photodiodes
MICROFJ-30035-TSV-TR  Optoelectronics
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X-On Electronics has gained recognition as a prominent supplier of MICROFJ-30035-TSV-TR Photodiodes across the USA, India, Europe, Australia, and various other global locations. MICROFJ-30035-TSV-TR Photodiodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Photodiodes, ensuring timely deliveries around the world.

Part No.MICROFJ-30035-TSV-TR
Manufacturer:ON Semiconductor
Category:Photodiodes
Description:Photodiodes J-SERIES 3MM 35U TSV
Datasheet:MICROFJ-30035-TSV-TR Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
3000: USD 19.3194 ea
Line Total: USD 57958.2 
Availability : 0
  
QtyUnit Price
3000$ 19.3194
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 1
QtyUnit Price
3000$ 19.3194


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 19.3194


Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 3000
Multiples : 1
QtyUnit Price
3000$ 21.9094


Availability0
Ship by Mon. 22 Jun to Wed. 24 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 20.592
10$ 17.71
100$ 17.292
500$ 16.577
1000$ 15.95
3000$ 15.939

   
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Product Category
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Peak Wavelength
Rise Time
Fall Time
Half Intensity Angle Degrees
Series
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Dark Current
Vr - Reverse Voltage
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We are delighted to provide the MICROFJ-30035-TSV-TR from our Photodiodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MICROFJ-30035-TSV-TR and other electronic components in the Photodiodes category and beyond.

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DATA SHEET www.onsemi.com Silicon Photomultipliers (SiPM), High PDE and Timing Resolution Sensors in a TSV Package J-Series SiPM Sensors onsemis J-Series low-light sensors feature a high PDE (photon detection efficiency) that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors ORDERING INFORMATION See detailed ordering and shipping information on page 11 of are available in different sizes (3 mm, 4 mm and 6 mm) and use a TSV this data sheet. (Through Silicon Via) process to create apackage with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes. The J-Series Silicon Photomultipliers (SiPM) combine high performance with the practical advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. For more information on the J-Series sensors please refer to the website. Table 1. GENERAL PARAMETERS Parameter (Note 1) Minimum Typical Maximum Unit 24.2 24.7 V Breakdown Voltage (Vbr) (Note 2) Overvoltage (OV) 1 6 V Operating Voltage (Vop = Vbr + OV)) 25.2 30.7 V Spectral Range (Note 3) 200 900 nm Peak PDE Wavelength ( p) 420 nm Temperature dependence of Vbr 21.5 mV/C 1. All measurements made at 21C unless otherwise stated. 2. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the bias voltage. 3. The range where PDE > 2.0% at Vbr + 6.0 V. Table 2. PHYSICAL PARAMETERS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 Parameter 2 2 2 Active Area 3.07 3.07 mm 3.93 3.93 mm 6.07 6.07 mm No. of Microcells 30020: 14,410 40035: 9,260 60035: 22,292 30035: 5,676 Microcell Fill Factor 30020: 62% 40035: 75% 60035: 75% 30035: 75% Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2021 Rev. 7 MICROJSERIES/DJSeries SiPM Sensors Table 3. PERFORMANCE PARAMETERS 30035 40035 60035 Unit Overvoltage +2.5 V +6 V +2.5 V +6 V +2.5 V +6 V Parameter (Note 4) Unit PDE (Note 5) 38 50 38 50 38 50 % 2 Dark Count Rate 50 150 50 150 50 150 kHz/mm 6 6 6 6 6 6 Gain (anode-cathode) 2.9 10 6.3 10 2.9 10 6.3 10 2.9 10 6.3 10 A Dark Current typical 0.23 1.9 0.35 3.0 0.9 7.5 Dark Current maximum 0.31 3.00 0.45 4.0 1.25 12.0 Rise Time (Note 6) anode-cathode output 90 110 90 110 180 250 ps Microcell Recharge Time Constant (Note 7) 45 48 50 ns Capacitance (Note 8) (anode output) 1070 1800 4140 pF Capacitance (Note 8) (fast output) 40 70 160 pF Fast Output Pulse Width (FWHM) 1.5 1.7 3.0 ns Crosstalk 8 25 8 25 8 25 % Afterpulsing 0.75 5.0 0.75 5.0 0.75 5.0 % 30020 Overvoltage +2.5 V +5 V Parameter (Note 4) Unit PDE (Note 5) 30 38 % 2 Dark Count Rate 50 125 kHz/mm 6 6 Gain (anode-cathode) 1.0 10 1.9 10 A Dark Current typical 0.1 0.45 Dark Current maximum 0.2 0.72 Rise Time (Note 6) anode-cathode output 130 160 ps Microcell Recharge Time Constant (Note 7) 15 ns Capacitance (Note 8) (anode output) 1040 pF Capacitance (Note 8) (fast output) 50 pF Fast Output Pulse Width (FWHM) 1.4 ns Crosstalk 2.5 7.5 % Afterpulsing 0.75 5.0 % 4. All measurements made at 21C unless otherwise stated. 5. PDE does not contain afterpulsing or crosstalk, and is quoted at the peak wavelength ( ). p 6. Measured as time to go from 10% to 90% of the peak amplitude and measured over a 1 series output resistor. 7. RC charging time constant of the microcell (). 8. Capacitance values are for the complete TSV package. Table 4. TVS PACKAGE SPECIFICS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 2 2 2 Package Dimensions 3.16 3.16 mm 4.00 4.00 mm 6.13 6.13 mm Recommended Operating Temperature Range 40C +85C Soldering Conditions Reflow Solder Cover Material Glass Cover Refractive Index 1.53 436 nm Moisture Sensitivity Level Tape & reel MSL3* Cut tape MSL4* Maximum Average Current 10 mA 10 mA 15 mA *Please refer to the TSV Handling and Soldering guide for more information on MSL for different delivery options. www.onsemi.com 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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