Product Information

MICROFJ-40035-TSV-TR1

MICROFJ-40035-TSV-TR1 electronic component of ON Semiconductor

Datasheet
Photodiodes J-SERIES 4MM 35U TSV

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 84.571 ea
Line Total: USD 84.57

3 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
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3 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

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MICROFJ-40035-TSV-TR1
ON Semiconductor

1 : USD 86.342
10 : USD 75.1525
25 : USD 72.3465
100 : USD 71.116
250 : USD 71.093
1000 : USD 71.0815
5000 : USD 71.07

     
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DATA SHEET www.onsemi.com Silicon Photomultipliers (SiPM), High PDE and Timing Resolution Sensors in a TSV Package J-Series SiPM Sensors onsemis J-Series low-light sensors feature a high PDE (photon detection efficiency) that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors ORDERING INFORMATION See detailed ordering and shipping information on page 11 of are available in different sizes (3 mm, 4 mm and 6 mm) and use a TSV this data sheet. (Through Silicon Via) process to create apackage with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes. The J-Series Silicon Photomultipliers (SiPM) combine high performance with the practical advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. For more information on the J-Series sensors please refer to the website. Table 1. GENERAL PARAMETERS Parameter (Note 1) Minimum Typical Maximum Unit 24.2 24.7 V Breakdown Voltage (Vbr) (Note 2) Overvoltage (OV) 1 6 V Operating Voltage (Vop = Vbr + OV)) 25.2 30.7 V Spectral Range (Note 3) 200 900 nm Peak PDE Wavelength ( p) 420 nm Temperature dependence of Vbr 21.5 mV/C 1. All measurements made at 21C unless otherwise stated. 2. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the bias voltage. 3. The range where PDE > 2.0% at Vbr + 6.0 V. Table 2. PHYSICAL PARAMETERS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 Parameter 2 2 2 Active Area 3.07 3.07 mm 3.93 3.93 mm 6.07 6.07 mm No. of Microcells 30020: 14,410 40035: 9,260 60035: 22,292 30035: 5,676 Microcell Fill Factor 30020: 62% 40035: 75% 60035: 75% 30035: 75% Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2021 Rev. 7 MICROJSERIES/DJSeries SiPM Sensors Table 3. PERFORMANCE PARAMETERS 30035 40035 60035 Unit Overvoltage +2.5 V +6 V +2.5 V +6 V +2.5 V +6 V Parameter (Note 4) Unit PDE (Note 5) 38 50 38 50 38 50 % 2 Dark Count Rate 50 150 50 150 50 150 kHz/mm 6 6 6 6 6 6 Gain (anode-cathode) 2.9 10 6.3 10 2.9 10 6.3 10 2.9 10 6.3 10 A Dark Current typical 0.23 1.9 0.35 3.0 0.9 7.5 Dark Current maximum 0.31 3.00 0.45 4.0 1.25 12.0 Rise Time (Note 6) anode-cathode output 90 110 90 110 180 250 ps Microcell Recharge Time Constant (Note 7) 45 48 50 ns Capacitance (Note 8) (anode output) 1070 1800 4140 pF Capacitance (Note 8) (fast output) 40 70 160 pF Fast Output Pulse Width (FWHM) 1.5 1.7 3.0 ns Crosstalk 8 25 8 25 8 25 % Afterpulsing 0.75 5.0 0.75 5.0 0.75 5.0 % 30020 Overvoltage +2.5 V +5 V Parameter (Note 4) Unit PDE (Note 5) 30 38 % 2 Dark Count Rate 50 125 kHz/mm 6 6 Gain (anode-cathode) 1.0 10 1.9 10 A Dark Current typical 0.1 0.45 Dark Current maximum 0.2 0.72 Rise Time (Note 6) anode-cathode output 130 160 ps Microcell Recharge Time Constant (Note 7) 15 ns Capacitance (Note 8) (anode output) 1040 pF Capacitance (Note 8) (fast output) 50 pF Fast Output Pulse Width (FWHM) 1.4 ns Crosstalk 2.5 7.5 % Afterpulsing 0.75 5.0 % 4. All measurements made at 21C unless otherwise stated. 5. PDE does not contain afterpulsing or crosstalk, and is quoted at the peak wavelength ( ). p 6. Measured as time to go from 10% to 90% of the peak amplitude and measured over a 1 series output resistor. 7. RC charging time constant of the microcell (). 8. Capacitance values are for the complete TSV package. Table 4. TVS PACKAGE SPECIFICS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 2 2 2 Package Dimensions 3.16 3.16 mm 4.00 4.00 mm 6.13 6.13 mm Recommended Operating Temperature Range 40C +85C Soldering Conditions Reflow Solder Cover Material Glass Cover Refractive Index 1.53 436 nm Moisture Sensitivity Level Tape & reel MSL3* Cut tape MSL4* Maximum Average Current 10 mA 10 mA 15 mA *Please refer to the TSV Handling and Soldering guide for more information on MSL for different delivery options. www.onsemi.com 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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