MJ11015 (PNP); MJ11012,
MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current
Complementary Silicon
Transistors
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
COLLECTOR COLLECTOR
PNP NPN
MJ11015 MJ11012
MJ11016
BASE BASE
8.0 k 40 8.0 k 40
EMITTER EMITTER
Figure 1. Darlington Circuit Schematic
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.)
C
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) V Vdc
(BR)CEO
(I = 100 mAdc, I = 0) MJ11012 60
C B
MJ11015, MJ11016 120
CollectorEmitter Leakage Current I mAdc
CER
(V = 60 Vdc, R = 1k ohm) MJ11012 1
CE BE
(V = 120 Vdc, R = 1k ohm) MJ11015, MJ11016 1
CE BE
(V = 60 Vdc, R = 1k ohm, T = 150C) MJ11012 5
CE BE C
(V = 120 Vdc, R = 1k ohm, T = 150C) MJ11015, MJ11016 5
CE BE C
Emitter Cutoff Current I 5 mAdc
EBO
(V = 5 Vdc, I = 0)
BE C
CollectorEmitter Leakage Current I 1 mAdc
CEO
(V = 50 Vdc, I = 0)
CE B
ON CHARACTERISTICS(1)
DC Current Gain h
FE
(I = 20 Adc,V = 5 Vdc) 1000
C CE
(I = 30 Adc, V = 5 Vdc) 200
C CE
CollectorEmitter Saturation Voltage V Vdc
CE(sat)
(I = 20 Adc, I = 200 mAdc) 3
C B
(I = 30 Adc, I = 300 mAdc) 4
C B
BaseEmitter Saturation Voltage V Vdc
BE(sat)
(I = 20 A, I = 200 mAdc) 3.5
C B
(I = 30 A, I = 300 mAdc) 5
C B
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product h 4 MHz
fe
(I = 10 A, V = 3 Vdc, f = 1 MHz)
C CE
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.