MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and MJ11021(PNP) MJ11022 (NPN) R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C D MUST BE FAST RECOVERY TYPE, e.g.: 1 V CC 200 1N5825 USED ABOVE I 100 mA B 100 V MSD6100 USED BELOW I 100 mA B R C SCOPE TUT 150 V2 R B APPROX +12 V D 51 1 10 K 8.0 100 0 V1 + 4.0 V APPROX 25 s 50 - 8.0 V for t and t , D is disconnected d r 1 and V2 = 0 t , t 10 ns r f DUTY CYCLE = 1.0% 0 0 25 50 75 100 125 150 175 200 For NPN test circuit reverse diode and voltage polarities. T , CASE TEMPERATURE (C) C Figure 1. Power Derating Figure 2. Switching Times Test Circuit ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) MJ11021, MJ11022 250 C B Collector Cutoff Current I mAdc CEO (V = 125, I = 0) MJ11021, MJ11022 1.0 CE B Collector Cutoff Current I mAdc CEV (V = Rated V , V = 1.5 Vdc) 0.5 CE CB BE(off) (V = Rated V , V = 1.5 Vdc, T = 150 C) 5.0 CE CB BE(off) J Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 400 15,000 C CE (I = 15 Adc, V = 5.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 100 mA) 2.0 C B (I = 15 Adc, I = 150 mA) 3.4 C B BaseEmitter On Voltage V 2.8 Vdc BE(on) I = 10 A, V = 5.0 Vdc) C CE BaseEmitter Saturation Voltage V 3.8 Vdc BE(sat) (I = 15 Adc, I = 150 mA) C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product h 3.0 Mhz fe (I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C pF CB E ob MJ11022 400 MJ11021 600 SmallSignal Current Gain h 75 fe (I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz) C CE SWITCHING CHARACTERISTICS Typical Characteristic Symbol NPN PNP Unit Delay Time t 150 75 ns d Rise Time t 1.2 0.5 s r (V = 100 V, I = 10 A, I = 100 mA CC C B V = 50 V) (See Figure 2) BE(off) Storage Time t 4.4 2.7 s s Fall Time t 10.0 2.5 s f 1. Pulsed Test: Pulse Width = 300 s, Duty Cycle 2%.