X-On Electronics has gained recognition as a prominent supplier of MJD122G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJD122G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

MJD122G ON Semiconductor

MJD122G electronic component of ON Semiconductor
MJD122G ON Semiconductor
MJD122G Darlington Transistors
MJD122G  Semiconductors

Images are for reference only
See Product Specifications
Part No. MJD122G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Darlington Transistors 8A 100V Bipolar Power NPN
Datasheet: MJD122G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
225: USD 0.7363 ea
Line Total: USD 165.67 
Availability - 2400
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ: 225  Multiples: 75
Pack Size: 75
Availability Price Quantity
2400
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 225
Multiples : 75
225 : USD 0.7363
300 : USD 0.5204
1050 : USD 0.4964
2550 : USD 0.4818
5025 : USD 0.4794
7500 : USD 0.477
10050 : USD 0.4745
15000 : USD 0.4721

528
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 450
Multiples : 75
450 : USD 0.6435
525 : USD 0.5486
525 : USD 0.5434

1196
Ship by Tue. 08 Jul to Fri. 11 Jul
MOQ : 1
Multiples : 1
1 : USD 1.592
10 : USD 1.3322
30 : USD 0.9039
75 : USD 0.6661
525 : USD 0.6139
975 : USD 0.5878

431
Ship by Fri. 27 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 1.232
5 : USD 1.1144
23 : USD 0.854
61 : USD 0.8078
750 : USD 0.7966

509
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 450
Multiples : 75
450 : USD 0.6435

2400
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 300
Multiples : 75
300 : USD 1.0714
375 : USD 0.7576
1050 : USD 0.6949
2550 : USD 0.6745
5025 : USD 0.6711

5165
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 422
Multiples : 1
422 : USD 0.6168
426 : USD 0.6106
431 : USD 0.6046
477 : USD 0.5455
525 : USD 0.5402
1050 : USD 0.5051

4365
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 300
Multiples : 75
300 : USD 0.8778
2250 : USD 0.7712
3375 : USD 0.7176
4500 : USD 0.6767

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Av Current Ic
Collector Emitter Saturation Voltage Vceon
Continuous Collector Current Ic Max
Current Ic Continuous A Max
Current Ic Hfe
Device Marking
External Depth
External Length / Height
External Width
Full Power Rating Temperature
Gain Bandwidth Ft Min
Hfe Min
No. Of Transistors
Operating Temperature Min
Operating Temperature Range
Power Dissipation Ptot Max
Smd Marking
Transistor Type
Voltage Vcbo
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We are delighted to provide the MJD122G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD122G and other electronic components in the Darlington Transistors category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MJD122 NPN Silicon Darlington Transistor March 2016 MJD122 NPN Silicon Darlington Transistor Features Equivalent Circuit D-PAK for Surface Mount Applications C High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications B Electrically Similar to Popular TIP122 D-PAK 1 Complement to MJD127 1.Base 2.Collector 3.Emitter R1 R2 E R1 8k R2 0.12k Ordering Information Part Number Top Mark Package Packing Method MJD122TF MJD122 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be oper- able above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 8 A C I Collector Current (Pulse) 16 A CP I Base Current 120 mA B Collector Dissipation (T = 25 C) 20 W C P C Collector Dissipation (T = 25 C) 1.75 W A T Junction Temperature 150 C J T Storage Temperature - 65 to 150 C STG 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com MJD122 Rev. 2.4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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