Product Information

MMBD6050LT3G

MMBD6050LT3G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 70V 200mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1357 ea
Line Total: USD 0.14

24419 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
24419 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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MMBD6050LT3G
ON Semiconductor

1 : USD 0.1357
10 : USD 0.0978
100 : USD 0.0414
1000 : USD 0.0241
2500 : USD 0.023
10000 : USD 0.0195
20000 : USD 0.0173
50000 : USD 0.0161
100000 : USD 0.0149

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

MMBD6050LT1G Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit 3 1 Reverse Voltage V 70 Vdc CATHODE ANODE R Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit 1 Total Device Dissipation FR5 Board, P D 2 (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C SOT23 (TO236) CASE 318 Thermal Resistance, JunctiontoAmbient R 556 C/W JA STYLE 8 Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C MARKING DIAGRAM Thermal Resistance, JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the 5A M device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. 1 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 5A = Device Code M = Date Code* = PbFree Package ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A (Note: Microdot may be in either location) Rating Symbol Min Max Unit *Date Code orientation and/or overbar may vary depending upon manufacturing location. OFF CHARACTERISTICS Reverse Breakdown Voltage V 70 Vdc R (I = 100 Adc) (BR) ORDERING INFORMATION Reverse Voltage Leakage Current I 0.1 Adc R Device Package Shipping (V = 50 Vdc) R MMBD6050LT1G SOT23 3,000 / Tape & Reel Forward Voltage V Vdc F (I = 1.0 mAdc) 0.55 0.7 (PbFree) F (I = 100 mAdc) 0.85 1.1 F MMBD6050LT3G SOT23 10,000/Tape & Reel Reverse Recovery Time (Figure 1) t 4.0 ns RR (PbFree) (I = I = 10 mAdc, I = 1.0 mAdc) F R R(REC) For information on tape and reel specifications, Capacitance C 2.5 pF D including part orientation and tape sizes, please (V = 0 V) R refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 7 MMBD6050LT1/DMMBD6050LT1G 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 100 10 T = 150C A T = 85C A T = 125C T = -40C A A 1.0 10 T = 85C A 0.1 T = 25C A 1.0 T = 55C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 8.0 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT ( A) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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