Product Information

MMBD6100LT1G

MMBD6100LT1G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 70V 200mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0427 ea
Line Total: USD 0.43

48 - Global Stock
Ships to you between
Mon. 27 May to Thu. 30 May
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
29 - WHS 1


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 10
Multiples : 10

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MMBD6100LT1G
ON Semiconductor

10 : USD 0.0427
100 : USD 0.0348
300 : USD 0.0308
3000 : USD 0.0263
6000 : USD 0.024
9000 : USD 0.0228

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Hts Code
Operating Temperature Range
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

MMBD6100LT1G Monolithic Dual Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant MAXIMUM RATINGS (EACH DIODE) ANODE 1 Rating Symbol Value Unit 3 2 CATHODE Reverse Voltage V 70 Vdc R ANODE Forward Current I 200 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) 3 THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Total Device Dissipation, FR5 Board P D (Note 1) SOT23 T = 25C 225 mW A CASE 318 Derate above 25C 1.8 mW/C STYLE 9 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina Substrate P D (Note 2) MARKING DIAGRAM T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, JunctiontoAmbient R 417 C/W JA 5B M Junction and Storage Temperature Range T , T 55 to +150 C J stg 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 5B = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR5 = 1.0 0.75 0.062 in. = PbFree Package 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A vary depending upon manufacturing location. Characteristic Symbol Min Max Unit OFF CHARACTERISTICS ORDERING INFORMATION Reverse Breakdown Voltage V 70 Vdc (BR) (I = 100 Adc) (BR) Device Package Shipping Reverse Voltage Leakage Current I 0.1 Adc R MMBD6100LT1G SOT23 3000/Tape & Reel (V = 50 Vdc) R (For each individual diode while the (PbFree) second diode is unbiased) MMBD6100LT3G SOT23 10,000/Tape & Reel Forward Voltage V Vdc F (PbFree) (I = 1.0 mAdc) 0.7 0.55 F (I = 100 mAdc) 1.1 F 0.8 For information on tape and reel specifications, including part orientation and tape sizes, please Reverse Recovery Time t 4.0 ns rr refer to our Tape and Reel Packaging Specifications (I = I = 10 mAdc, I = 1.0 mAdc) F R R(REC) Brochure, BRD8011/D. (Figure 1) Capacitance C 2.5 pF (V = 0 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 4 MMBD6100LT1/DMMBD6100LT1G 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 T = 150C A T = 85C A T = 125C T = -40C A A 1.0 10 T = 85C A 0.1 T = 25C A 1.0 T = 55C A 0.01 T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 1.0 0.9 0.8 0.7 0.6 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , DIODE CAPACITANCE (pF) D I , REVERSE CURRENT ( A) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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