DATA SHEET www.onsemi.com Switch N-Channel MMBF5103 SOT23 CASE 31808 Features This Device is Designed for Low Level Analog Switching, Sample MARKING DIAGRAM and Hold Circuits and Chopper Stabilized Amplifiers 3 Sourced from Process 51 1. Drain 66AM See J111 for Characteristics 2. Source 3. Gate This is a PbFree and Halide Free Device 2 1 66A = Specific Device Code ABSOLUTE MAXIMUM RATINGS M = Date Code (Values are at T = 25C unless otherwise noted.) (Notes 1 and 2) A = PbFree Package Symbol Parameter Value Unit V DrainGate Voltage 40 V DG ORDERING INFORMATION V GateSource Voltage 40 V GS Device Package Shipping I Forward Gate Current 50 mA GF MMBF5103 SOT23 3000 / T , T Operating and Storage Junction 55 to 150 C J STG (PbFree / Tape & Reel Temperature Range Halide Free) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. These ratings are based on a maximum junction temperature of 150C. refer to our Tape and Reel Packaging Specification 2. These are steadystate limits. onsemi should be consulted on applications Brochure, BRD8011/D. involving pulsed or low dutycycle operations. THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) (Note 3) A Symbol Parameter Value Unit P Total Device Dissipation 350 mW D Derate Above 25 C 2.8 mW/C R Thermal Resistance, JunctiontoAmbient 357 C/W JA 2 3. Device mounted on FR4 PCB 36 mm 18 mm 1.5 mm mounting pad for the collector lead minimum 6 cm . ELECTRICAL CHARACTERISTICS Values are at T = 25C unless otherwise noted. A Symbol Parameter Test Conditions Min Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 1.0 A, V = 0 40 V (BR)GSS G DS I Gate Reverse Current V = 15 V, V = 0 200 pA GSS GS DS V = 15 V, V = 0, T = 125C 500 nA GS DS A V (off) GateSource CutOff Voltage V = 20 V, I = 1.0 nA 1.2 2.7 V GS DS D V (f) GateSource Forward Voltage I = 1.0 mA, V = 0 1.0 V GS G DS ON CHARACTERISTICS I ZeroGate Voltage Drain Current (Note 4) V = 15 V, V = 0 10 40 mA DSS DS GS SMALL SIGNAL CHARACTERISTICS C Input Capacitance V = 15 V, V = 0, f = 1.0 MHz 16 pF iss DS GS C Reverse Transfer Capacitance V = 15 V, f = 1.0 MHz 6.0 pF rss GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test with PW = 300 s, 1% duty cycle. Semiconductor Components Industries, LLC, 2003 1 Publication Order Number: January, 2022 Rev. 2 MMBF5103/DMECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT23 (TO236) CASE 31808 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 NOTES: D 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. 0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 3 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, T H E PROTRUSIONS, OR GATE BURRS. E 1 2 MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX L A 0.89 1.00 1.11 0.035 0.039 0.044 A1 0.01 0.06 0.10 0.000 0.002 0.004 3X b L1 b 0.37 0.44 0.50 0.015 0.017 0.020 e c 0.08 0.14 0.20 0.003 0.006 0.008 VIEW C D 2.80 2.90 3.04 0.110 0.114 0.120 TOP VIEW E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.080 L 0.30 0.43 0.55 0.012 0.017 0.022 0.35 0.54 0.69 0.014 0.021 0.027 L1 A HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0 10 0 10 c A1 SEE VIEW C SIDE VIEW GENERIC END VIEW MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT XXXM 1 3X XXX = Specific Device Code 2.90 0.90 M = Date Code = PbFree Package *This information is generic. Please refer to 3X 0.80 0.95 device data sheet for actual part marking. PITCH PbFree indicator, G or microdot , DIMENSIONS: MILLIMETERS may or may not be present. STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8: CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE 2. EMITTER 2. BASE 2. NO CONNECTION 3. COLLECTOR 3. COLLECTOR 3. CATHODE STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14: PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE 2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE 3. CATHODE 3. GATE 3. CATHODE ANODE 3. ANODE 3. GATE 3. ANODE STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20: PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE 3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE ANODE 3. GATE STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26: PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE 2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE 3. SOURCE 3. GATE 3. NO CONNECTION 3. DRAIN 3. INPUT 3. CATHODE STYLE 27: STYLE 28: PIN 1. CATHODE PIN 1. ANODE 2. CATHODE 2. ANODE 3. CATHODE 3. ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. DESCRIPTION: SOT23 (TO236) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. Semiconductor Components Industries, LLC, 2019 www.onsemi.com