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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBFJ270 P-Channel Switch August 2008 MMBFJ270 P-Channel Switch Features This device is designed for low level analog switching sample and hold G circuits and chopper stabilized amplifiers. Sourced from process 88. S D SOT-23 Mark : 61S Absolute Maximum Ratings (Note1) T = 25C unless otherwise noted a Symbol Parameter Value Units V Drain-Gate Voltage -30 V DG V Gate-Source Voltage 30 V GS I Forward Gate Current 50 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 C J STG Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter Value Units P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/C R Thermal Resistance, Junction to Ambient (Note2) 556 C/W JA Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Condition MIN MAX Units Off Characteristics (Note3) V Gate-Source Breakdwon Voltage I = 1.0A, V = 0 30 V (BR)GSS G DS I Gate Reverse Current V = 20V, V = 0 200 pA GSS GS DS V Gate-Source Cutoff Voltage V = -15V, I = -1.0nA 0.5 2.0 V GS(off) DS D On Characteristics (Note3) I Zero-Gate Voltage Drain Current * V = -15V, V = 0 -2.0 -15 mA DSS DS GS gfs Forward Transferconductance V = 0V, V = 15V, f = 1.0kHz 6000 15000 mhos GS DS goss Common- Source Output Conduc- V = 0V, V = 15V, f = 1.0kHz 200 mhos GS DS tance Note3 : Short duration test pulse used to minimize self-heating effect. 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ270 Rev. B 1