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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.MMBFJ309 / MMBFJ310 N-Channel RF Amplifier January 2015 MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Description G This device is designed for VHF/UHF amplifier, oscil- lator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz S can be realized. Sourced from process 92. Source & Note: Source & Drain SOT-23 D are interchangeable Drain are interchangeable. Ordering Information Part Number Top Mark Package Packing Method MMBFJ309 6U SOT-23 3L Tape and Reel MMBFJ310 6T SOT-23 3L Tape and Reel (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Gate Voltage 25 V DG V Gate-Source Voltage -25 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 to 150 C J STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (3) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit Total Device Dissipation 350 mW P D Derate Above 25C2.8mW/C R Thermal Resistance, Junction-to-Ambient 357 C/W JA Note: 2 3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm mounting pad for the collector lead minimum 6cm . 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBFJ309 / MMBFJ310 Rev. 1.5