MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series Zener Diodes, 40 Watt Peak Power SC70 Dual Common Anode Zeners www.onsemi.com These dual monolithic silicon Zener diodes are designed for applications requiring protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects SC70 two separate lines using only one package. These devices are ideal for CASE 419 situations where board space is at a premium. STYLE 4 Features CATHODE 1 SC70 Package Allows Either Two Separate Unidirectional 3 ANODE Configurations or a Single Bidirectional Configuration CATHODE 2 Standard Zener Breakdown Voltage Range: 15 33 V Peak Power 40 W 1.0 ms (Unidirectional), MARKING DIAGRAM per Figure 5 Waveform ESD Rating: Class 3B (> 16 kV) per the Human Body Model XX M Class C (> 400 V) per the Machine Model Low Leakage < 5.0 A 1 Flammability Rating UL 94 V0 AECQ101 Qualified and PPAP Capable SZMMBZxxVAWT1G XX = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code Site and Control Change Requirements = PbFree Package These are PbFree Devices* (Note: Microdot may be in either location) Mechanical Characteristics: ORDERING INFORMATION CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable Device Package Shipping MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: MMBZxxVAWT1G SC70 3,000 / 260C for 10 Seconds (PbFree) Tape & Reel Package designed for optimal automated board assembly SZMMBZxxVAWT1G SC70 3,000 / Small package size for high density applications (PbFree) Tape & Reel Available in 8 mm Tape and Reel For information on tape and reel specifications, including part orientation and tape sizes, please Use the Device Number to order the 7 inch/3,000 unit reel. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 2 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: August, 2018 Rev. 5 MMBZ27VAW/DMMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 1.0 ms (Note 1) P W pk T 25C 40 L Total Power Dissipation on FR5 Board (Note 2) P D T = 25C 200 mW A Derate above 25C 1.6 mW/C Thermal Resistance JunctiontoAmbient R 618 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 5 and derate above T = 25C per Figure 6. A 2. FR5 = 1.0 x 0.75 x 0.62 in. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol Parameter I I Maximum Reverse Peak Pulse Current PP I V Clamping Voltage I F C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T V V V C BR RWM V I Test Current I T V R F I T V Maximum Temperature Coefficient of V BR BR I Forward Current F V Forward Voltage I F F I PP Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK UniDirectional Zener Z Maximum Zener Impedance I ZK ZK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V = 0.9 V Max I = 10 mA) F F Breakdown Voltage V I (Note 4) C PP I R V V (Note 3) (V) I V I V V RWM BR T C PP RWM BR Device Volts nA Min Nom Max mA V A mV/ C Marking Device* MMBZ15VAWT1G AT 12 50 14.25 15 15.75 1.0 21 1.9 12.3 MMBZ20VAWT1G AU 17 50 19.00 20 21.00 1.0 28 1.4 17.2 MMBZ27VAWT1G AA 22 50 25.65 27 28.35 1.0 40 1.0 24.3 MMBZ33VAWT1G AV 26 50 31.35 33 34.65 1.0 46 0.87 30.4 3. V measured at pulse test current I at an ambient temperature of 25C. BR T 4. Surge current waveform per Figure 5 and derate per Figure 6 *Include SZ-prefix devices where applicable. www.onsemi.com 2