Product Information

MMFT960T1G

MMFT960T1G electronic component of ON Semiconductor

Datasheet
MOSFET 60V 300mA N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 0.2123 ea
Line Total: USD 212.3

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 29 Sep to Thu. 05 Oct

MOQ : 1000
Multiples : 1000

Stock Image

MMFT960T1G
ON Semiconductor

1000 : USD 0.2123
4000 : USD 0.2072

     
Manufacturer
ON Semiconductor
Product Category
MOSFET
RoHS - XON
Y Icon ROHS
Id - Continuous Drain Current
300 mA
Vds - Drain-Source Breakdown Voltage
60 V
Rds On - Drain-Source Resistance
1.7 Ohms
Transistor Polarity
N - Channel
Vgs - Gate-Source Breakdown Voltage
30 V
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
800 mW
Mounting Style
Smd/Smt
Package / Case
SOT - 223 - 3
Packaging
Reel
Channel Mode
Enhancement
Configuration
Single Dual Drain
Series
Mmft960
Brand
On Semiconductor
Forward Transconductance - Min
0.6 S
Factory Pack Quantity :
1000
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MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts NChannel SOT223 This Power MOSFET is designed for high speed, low loss power MMFT960T1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 60 Vdc (BR)DSS (V = 0, I = 10 A) GS D Zero Gate Voltage Drain Current I 10 Adc DSS (V = 60 V, V = 0) DS GS GateBody Leakage Current I 50 nAdc GSS (V = 15 Vdc, V = 0) GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 3.5 Vdc GS(th) (V = V , I = 1.0 mAdc) DS GS D Static DraintoSource OnResistance R 1.7 DS(on) (V = 10 Vdc, I = 1.0 A) GS D DraintoSource OnVoltage V Vdc DS(on) (V = 10 V, I = 0.5 A) 0.8 GS D (V = 10 V, I = 1.0 A) 1.7 GS D Forward Transconductance g 600 mmhos fs (V = 25 V, I = 0.5 A) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 65 pF iss Output Capacitance C 33 (V = 25 V, V = 0, f = 1.0 MHz) oss DS GS Transfer Capacitance C 7.0 rss Total Gate Charge Q 3.2 nC g GateSource Charge (V = 10 V, I = 1.0 A, V = 48 V) Q 1.2 GS D DS gs GateDrain Charge Q 2.0 gd 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 5 1 T = 25C J T = 25C J T = 55C J 4 0.8 V = 10 V GS T = 125C J 3 8 V 0.6 7 V 2 0.4 6 V V = 10 V DS 5 V 1 0.2 4 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V , DRAINTOSOURCE VOLTAGE (VOLTS) V , GATETOSOURCE VOLTAGE (VOLTS) DS GS Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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