MMFT960T1 Preferred Device Power MOSFET 300 mA, 60 Volts NChannel SOT223 This Power MOSFET is designed for high speed, low loss power MMFT960T1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 60 Vdc (BR)DSS (V = 0, I = 10 A) GS D Zero Gate Voltage Drain Current I 10 Adc DSS (V = 60 V, V = 0) DS GS GateBody Leakage Current I 50 nAdc GSS (V = 15 Vdc, V = 0) GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 1.0 3.5 Vdc GS(th) (V = V , I = 1.0 mAdc) DS GS D Static DraintoSource OnResistance R 1.7 DS(on) (V = 10 Vdc, I = 1.0 A) GS D DraintoSource OnVoltage V Vdc DS(on) (V = 10 V, I = 0.5 A) 0.8 GS D (V = 10 V, I = 1.0 A) 1.7 GS D Forward Transconductance g 600 mmhos fs (V = 25 V, I = 0.5 A) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 65 pF iss Output Capacitance C 33 (V = 25 V, V = 0, f = 1.0 MHz) oss DS GS Transfer Capacitance C 7.0 rss Total Gate Charge Q 3.2 nC g GateSource Charge (V = 10 V, I = 1.0 A, V = 48 V) Q 1.2 GS D DS gs GateDrain Charge Q 2.0 gd 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 5 1 T = 25C J T = 25C J T = 55C J 4 0.8 V = 10 V GS T = 125C J 3 8 V 0.6 7 V 2 0.4 6 V V = 10 V DS 5 V 1 0.2 4 V 0 0 0 2 4 6 8 10 0 2 4 6 8 10 V , DRAINTOSOURCE VOLTAGE (VOLTS) V , GATETOSOURCE VOLTAGE (VOLTS) DS GS Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics