MMT05A310T3G ON Semiconductor

MMT05A310T3G electronic component of ON Semiconductor
MMT05A310T3G ON Semiconductor
MMT05A310T3G Thyristor Surge Protection Devices - TSPD
MMT05A310T3G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of MMT05A310T3G Thyristor Surge Protection Devices - TSPD across the USA, India, Europe, Australia, and various other global locations. MMT05A310T3G Thyristor Surge Protection Devices - TSPD are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Thyristor Surge Protection Devices - TSPD, ensuring timely deliveries around the world.

Part No. MMT05A310T3G
Manufacturer: ON Semiconductor
Category: Thyristor Surge Protection Devices - TSPD
Description: Thyristor Surge Protection Devices - TSPD 50A Surge 365V
Datasheet: MMT05A310T3G Datasheet (PDF)
Price (USD)
4564: USD 0.076 ea
Line Total: USD 346.86 
Availability : 0
  
QtyUnit Price
4564$ 0.076

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.1839


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 822
Multiples : 822
QtyUnit Price
822$ 0.5279


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 4564
Multiples : 4564
QtyUnit Price
4564$ 0.076

   
Manufacturer
Product Category
Packaging
Mounting
Operating Temp Range
Package Type
Peak Repeat Off Current
Repetitive Peak Off-State Volt
Pin Count
Type
Off-State Voltage
Operating Temperature Classification
On State Voltage Max
Hold Current
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMT05A310T3G from our Thyristor Surge Protection Devices - TSPD category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMT05A310T3G and other electronic components in the Thyristor Surge Protection Devices - TSPD category and beyond.

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MMT05A230T3, MMT05A260T3, MMT05A310T3 Preferred Devices Thyristor Surge Protectors High Voltage Bidirectional TSPD MMT05A230T3, MMT05A260T3, MMT05A310T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range T 40 to +125 C J1 Blocking or Conducting State Overload Junction Temperature Maximum Conducting State Only T +175 C J2 Instantaneous Peak Power Dissipation (I = 50A, 10x1000 sec 25C) P 2000 W pk PK Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) V Volts (BO) (dv/dt = 100 V/s, I = 1.0 A, Vdc = 1000 V) MMT05A230T3 265 SC MMT05A260T3 320 MMT05A310T3 365 (+65C) MMT05A230T3 280 MMT05A260T3 340 MMT05A310T3 400 Breakover Voltage (Both polarities) V Volts (BO) (f = 60 Hz, I = 1.0 A(rms), V = 1000 V(rms), MMT05A230T3 265 SC OC R = 1.0 k, t = 0.5 cycle) (Note 3) MMT05A260T3 320 I MMT05A310T3 365 (+65C) MMT05A230T3 280 MMT05A260T3 340 MMT05A310T3 400 Breakover Voltage Temperature Coefficient dV /dT 0.08 %/C (BO) J Breakdown Voltage (I = 1.0 mA) Both polarities V Volts (BR) (BR) MMT05A230T3 190 MMT05A260T3 240 MMT05A310T3 280 Off State Current (V = 50 V) Both polarities I 2.0 A D1 D1 Off State Current (V = V ) Both polarities I 5.0 D2 DM D2 OnState Voltage (I = 1.0 A) V 1.53 3.0 Volts T T (PW 300 s, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, V = 1000 V(rms), R = 1.0 k) I 230 mA DM S BO Both polarities Holding Current (Both polarities) (Note 3) I 150 340 mA H V = 500 Volts I (Initiating Current) = 1.0 Amp S T Critical Rate of Rise of OffState Voltage dv/dt 2000 V/s (Linear waveform, V = Rated V , T = 25C) D BR J Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal) C 22 pF O Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal) 35 50 3. Measured under pulse conditions to reduce heating.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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