X-On Electronics has gained recognition as a prominent supplier of MMUN2115LT1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MMUN2115LT1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MMUN2115LT1G ON Semiconductor

MMUN2115LT1G electronic component of ON Semiconductor
MMUN2115LT1G ON Semiconductor
MMUN2115LT1G Bipolar Transistors - Pre-Biased
MMUN2115LT1G  Semiconductors

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See Product Specifications
Part No. MMUN2115LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Datasheet: MMUN2115LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1587 ea
Line Total: USD 0.16 
Availability - 36863
Ship by Wed. 07 May to Fri. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Fri. 16 May to Wed. 21 May
MOQ : 5
Multiples : 5
5 : USD 0.3144
50 : USD 0.2556
150 : USD 0.1729
500 : USD 0.1346
3000 : USD 0.1252
6000 : USD 0.1195
9000 : USD 0.1183

36863
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.1587
10 : USD 0.1013
100 : USD 0.0637
500 : USD 0.0432
1000 : USD 0.0345
3000 : USD 0.0286
6000 : USD 0.0253
9000 : USD 0.0198

3129
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 0.182
10 : USD 0.1106
100 : USD 0.07
500 : USD 0.0518
808 : USD 0.0238

   
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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We are delighted to provide the MMUN2115LT1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMUN2115LT1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Digital Transistors (BRT) R1 = 10 k , R2 = k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc 1 CEO Collector Current Continuous I 100 mAdc C SC75 XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 5 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 3 DTA114T/DMUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2115T1G 6E SC59 3000 / Tape & Reel (PbFree) MMUN2115LT1G A6E SOT23 3000 / Tape & Reel (PbFree) MUN5115T1G, SMUN5115T1G 6E SC70/SOT323 3000 / Tape & Reel (PbFree) DTA114TET1G 6E SC75 3000 / Tape & Reel (PbFree) DTA114TM3T5G 6E SOT723 8000 / Tape & Reel (PbFree) NSBA114TF3T5G L (90)* SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. * (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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