MMUN2215LT1G ON Semiconductor

MMUN2215LT1G electronic component of ON Semiconductor
MMUN2215LT1G ON Semiconductor
MMUN2215LT1G Bipolar Transistors - Pre-Biased
MMUN2215LT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMUN2215LT1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MMUN2215LT1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

Part No. MMUN2215LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
Datasheet: MMUN2215LT1G Datasheet (PDF)
Price (USD)
22223: USD 0.0211 ea
Line Total: USD 468.91 
Availability : 361006
  
Ship by Wed. 26 Nov to Tue. 02 Dec
QtyUnit Price
22223$ 0.0211
100000$ 0.0176

Availability 664
Ship by Mon. 24 Nov to Wed. 26 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.182
5$ 0.154
10$ 0.1316
100$ 0.0672
500$ 0.0434


Availability 361006
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 22223
Multiples : 1
QtyUnit Price
22223$ 0.0211
100000$ 0.0176


Availability 1955724
Ship by Wed. 26 Nov to Tue. 02 Dec
MOQ : 22223
Multiples : 1
QtyUnit Price
22223$ 0.0211
100000$ 0.0176

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
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Dc Current Gain Hfe Max
Height
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Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMUN2215LT1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMUN2215LT1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Digital Transistors (BRT) R1 = 10 k , R2 = k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER (GROUND) both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 1 CollectorEmitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc SC75 C XX M CASE 463 Input Forward Voltage V 40 Vdc IN(fwd) STYLE 1 1 Input Reverse Voltage V 6 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2016 Rev. 2 DTC114T/DMUN2215, MMUN2215L, MUN5215, DTC114TE, DTC114TM3, NSBC114TF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2215T1G 8E SC59 3000 / Tape & Reel (PbFree) MMUN2215LT1G, SMMUN2215LT1G* A8E SOT23 3000 / Tape & Reel (PbFree) MUN5215T1G, SMUN5215T1G* 8E SC70/SOT323 3000 / Tape & Reel (PbFree) DTC114TET1G 8E SC75 3000 / Tape & Reel (PbFree) DTC114TM3T5G 8E SOT723 8000 / Tape & Reel (PbFree) NSBC114TF3T5G K (90) SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. * (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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