MOC223R1M ON Semiconductor

MOC223M Small Outline Optocouplers Darlington Output April 2013 MOC223M Small Outline Optocouplers Darlington Output Features Description U.L. Recognized (File E90700, Volume 2) The MOC223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon VDE Recognized (File 136616) (add option V for photodarlington detector, in a surface mountable, small VDE approval, i.e., MOC223VM) outline, plastic package. It is ideally suited for high Industry Standard SOIC-8 Surface Mountable density applications, and eliminates the need for through Package with 0.050 Lead Spacing the board mounting. High Current Transfer Ratio of 500% Minimum at I = 1 mA F Standard SOIC-8 Footprint, with 0.050 Lead Spacing High Input-Output Isolation Voltage of 2500 V AC(rms) Guaranteed Applications Low Power Logic Circuits Interfacing and Coupling Systems of Different Potentials and Impedances Telecommunications Equipment Portable Electronics Solid State Relays Schematic Package Outline ANODE 1 8 N/C CATHODE 2 7 BASE Figure 2. Package Outline N/C 3 6 COLLECTOR N/C 4 5 EMITTER Figure 1. Schematic 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC223M Rev. 1.0.3MOC223M Small Outline Optocouplers Darlington Output Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. T = 25C unless otherwise specied. A Symbol Rating Value Unit Emitter I Forward Current Continuous 60 mA F I (pk) Forward Current Peak (PW = 100 s, 120 pps) 1.0 A F V Reverse Voltage 6.0 V R LED Power Dissipation T = 25C 90 mW P D A Derate above 25C 0.8 mW/C Detector V Collector-Emitter Voltage 30 V CEO V Emitter-Collector Voltage 7.0 V ECO Collector-Base Voltage 70 V V CBO I Collector Current-Continuous 150 mA C P Detector Power Dissipation T = 25C 150 mW D A Derate above 25C 1.76 mW/C Total Device V Input-Output Isolation Voltage (f = 60 Hz, t = 1 minute) 2500 Vac(rms) ISO P Total Device Power Dissipation T = 25C 250 mW D A Derate above 25C 2.94 mW/C T Ambient Operating Temperature Range -40 to +100 C A Storage Temperature Range -40 to +150 C T stg 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com MOC223M Rev. 1.0.3 2