6-Pin DIP Zero-Cross Triac Driver Optocoupler (600 Volt Peak) MOC3061M, MOC3062M, MOC3063M, MOC3162M, www.onsemi.com MOC3163M Description PDIP6 8.51x6.35, 2.54P The MOC306XM and MOC316XM devices consist of a GaAs CASE 646BX 6 infrared emitting diode optically coupled to a monolithic silicon 1 detector performing the function of a zero voltage crossing bilateral triac driver. PDIP6 8.51x6.35, 2.54P They are designed for use with a triac in the interface of logic 6 CASE 646BY systems to equipment powered from 115/240 VAC lines, such as 1 solidstate relays, industrial controls, motors, solenoids and consumer appliances, etc. PDIP6 8.51x6.35, 2.54P Features 6 CASE 646BZ Simplifies Logic Control of 115/240 VAC Power 1 Zero Voltage Crossing to Minimize Conducted and Radiated Line MARKING DIAGRAM Noise 600 V Peak Blocking Voltage ON MOC3061 Superior Static dv/dt V XYYQ 600 V/ s (MOC306xM) 1000 V/ s (MOC316xM) MOC3061 = Device Number Safety and Regulatory Approvals V = DIN EN/IEC6074755 Option (only UL1577, 4,170 VAC for 1 Minute appears on component ordered with RMS this option) DIN EN/IEC6074755 X = OneDigit Year Code, e.g., 5 These are PbFree Devices YY = TwoDigit Work Week, Ranging from 01 to 53 Applications Q = Assembly Package Code Solenoid/Valve Controls SCHEMATIC Static Power Switches Temperature Controls AC Motor Starters ANODE 1 6 MAIN TERM. Lighting Controls AC Motor Drives E.M. Contactors CATHODE 2 5 NC* Solid State Relays ZERO N/C 3 CROSSING 4 MAIN TERM. CIRCUIT *DO NOT CONNECT (TRIAC SUBSTRATE) ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: May, 2021 Rev. 2 MOC3163M/DMOC3061M, MOC3062M, MOC3063M, MOC3162M, MOC3163M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage <150 V IIV RMS <300 V IIV RMS Climatic Classification 40/85/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1594 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm 9 R Insulation Resistance at T , V = 500 V >10 IO S IO ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A Symbol Parameter Device Value Unit TOTAL DEVICE T Storage Temperature All 40 to +150 C STG T Operating Temperature All 40 to +85 C OPR T Junction Temperature Range All 40 to +100 C J T Lead Solder Temperature All 260 for C SOL 10 seconds P All Total Device Power Dissipation at 25C Ambient 250 mW D Derate Above 25C 2.94 mW/C EMITTER I Continuous Forward Current All 60 mA F V Reverse Voltage All 6 V R P Total Power Dissipation at 25C Ambient All 120 mW D Derate Above 25C 1.41 mW/C DETECTOR V OffState Output Terminal Voltage All 600 V DRM I Peak NonRepetitive Surge Current (Single Cycle 60 Hz Sine Wave) All 1 A TSM peak I Peak Repetitive OnState Current All 100 mA TM peak P Total Power Dissipation at 25C Ambient All 150 mW D Derate Above 25C 1.76 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2