MPS6724, MPS6725 One Watt Darlington Transistors NPN Silicon MPS6724, MPS6725 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) V Vdc (BR)CES (I = 1.0 mAdc, I = 0) MPS6724 40 C B MPS6725 50 CollectorBase Breakdown Voltage V Vdc (BR)CBO 50 (I = 1.0 Adc, I = 0) MPS6724 C E MPS6725 60 EmitterBase Breakdown Voltage V 12 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) MPS6724 100 CB E (V = 40 Vdc, I = 0) MPS6725 100 CB E Emitter Cutoff Current I 100 nAdc EBO (V = 10 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 200 mAdc, V = 5.0 Vdc) 25,000 C CE (I = 1000 mAdc, V = 5.0 Vdc) 4,000 40,000 C CE CollectorEmitter Saturation Voltage V 1.5 Vdc CE(sat) (I = 1000 mAdc, I = 2.0 mAdc) C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 1000 mAdc, V = 5.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 1000 MHz T (I = 200 mAdc, V = 5.0 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C 10 pF cb (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. TYPICAL CHARACTERISTICS CURRENT LIMIT DUTY CYCLE 10% 3.0 k THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 k 100 s 1.0 ms 1.0 k 1.0 s 500 T = 25C T = 25C A C 200 1.5 2.0 5.0 10 20 30 V , COLLECTOREMITTER VOLTAGE (VOLTS) CE Figure 1. Active Region Safe Operating Area