MPSA75, MPSA77 Darlington Transistors PNPSilicon Features These are Pb--Free Devices* MPSA75,MPSA77 ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFFCHARACTERISTICS Collector--Emitter Breakdown Voltage MPSA75 V --40 -- -- Vdc (BR)CES (I = --100mAdc, V = 0) MPSA77 --60 -- -- C BE Collector--Base Breakdown Voltage MPSA75 V --40 -- -- Vdc (BR)CBO (I = 100 mAdc, I = 0) MPSA77 --60 -- -- C E Collector Cutoff Current I nAdc CBO (V =--30V,I = 0) MPSA75 -- -- --100 CB E (V =--50V,I = 0) MPSA77 -- -- --100 CB E Collector Cutoff Current I nAdc CES (V =--30V,V = 0) MPSA75 -- -- --500 CE BE (V =--50V,V = 0) MPSA77 -- -- --500 CE BE Emitter Cutoff Current I -- -- --100 nAdc EBO (V =--10Vdc) EB ONCHARACTERISTICS DC Current Gain h -- FE (I =--10mA,V =--5.0V) 10,000 -- -- C CE (I = --100 mA, V =--5.0V) 10,000 -- -- C CE Collector--Emitter Saturation Voltage V -- -- --1.5 Vdc CE(sat) (I = --100 mA, I =--0.1mAdc) C B Base--Emitter On Voltage V -- -- --2.0 Vdc BE (I = --100 mA, V =--5.0Vdc) C CE SMALL--SIGNALCHARACTERISTICS Current--Gain -- High Frequency h 1.25 2.4 -- -- fe (I =--10mA,V =--5.0V,f=100MHz) C CE