Product Information

MUR8100EG

MUR8100EG electronic component of ON Semiconductor

Datasheet
ON Semiconductor Rectifiers 1000V 8A UltraFast

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.301 ea
Line Total: USD 2.3

85 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
85 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

MUR8100EG
ON Semiconductor

1 : USD 2.301
3 : USD 1.69
10 : USD 1.495
13 : USD 1.287
35 : USD 1.209

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Category
Brand Category
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MUR8100E, MUR880E MUR8100E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8100 and MUR880E diodes aredesigned for use in MUR8100E, MUR880E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage MUR880E V 800 R MUR8100E 1000 Average Rectified Forward Current I 8.0 A F(AV) (Rated V , T = 150C) Total Device R C Peak Repetitive Forward Current I 16 A FM (Rated V , Square Wave, 20 kHz, T = 150C) R C NonRepetitive Peak Surge Current I 100 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction and Storage Temperature Range T , T 65 to +175 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction toCase R 2.0 C/W JC ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) v V F (i = 8.0 A, T = 150C) 1.5 F C (i = 8.0 A, T = 25C) 1.8 F C Maximum Instantaneous Reverse Current (Note 1) i A R (Rated DC Voltage, T = 100C) 500 C (Rated DC Voltage, T = 25C) 25 C Maximum Reverse Recovery Time t ns rr (I = 1.0 A, di/dt = 50 A/ s) 100 F (I = 0.5 A, i = 1.0 A, I = 0.25 A) 75 F R REC Controlled Avalanche Energy W 20 mJ AVAL (See Test Circuit in Figure 6) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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