Product Information

NCP114ASN150T2G

NCP114ASN150T2G electronic component of ON Semiconductor

Datasheet
LDO Voltage Regulators 300 MA CMOS LDO AD OPTIO

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 0.6876 ea
Line Total: USD 0.69

1749 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1749 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

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NCP114ASN150T2G
ON Semiconductor

1 : USD 0.4715
10 : USD 0.383
100 : USD 0.2357
1000 : USD 0.1346
3000 : USD 0.1254
9000 : USD 0.115

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Polarity
Quiescent Current
Input Voltage MIN
Input Voltage MAX
PSRR / Ripple Rejection - Typ
Output Type
Maximum Operating Temperature
Dropout Voltage
Series
Packaging
Product
Type
Brand
Dropout Voltage - Max
Voltage Regulation Accuracy
Development Kit
Line Regulation
Load Regulation
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Voltage Regulator - CMOS Low Dropout 300 mA NCP114 The NCP114 is 300 mA LDO that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, www.onsemi.com noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCP114 employs the dynamic quiescent current adjustment for very low I consumption at MARKING Q noload. DIAGRAMS UDFN4 Features XX M MX SUFFIX Operating Input Voltage Range: 1.7 V to 5.5 V 1 CASE 517CU 1 Available in Fixed Voltage Options: 0.75 V to 3.6 V XX = Specific Device Code Contact Factory for Other Voltage Options M = Date Code Very Low Quiescent Current of Typ. 50 A 5 Standby Current Consumption: Typ. 0.1 A TSOP5 XXXAYW SN SUFFIX Low Dropout: 135 mV Typical at 300 mA CASE 483 1% Accuracy at Room Temperature 1 High Power Supply Ripple Rejection: 75 dB at 1 kHz XXX = Specific Device Code Thermal Shutdown and Current Limit Protections A = Assembly Location Y = Year Stable with a 1 F Ceramic Output Capacitor W = Work Week Available in UDFN and TSOP Packages = PbFree Package These are PbFree Devices (Note: Microdot may be in either location) Typical Applicaitons PIN CONNECTIONS PDAs, Mobile phones, GPS, Smartphones EN IN Wireless Handsets, Wireless LAN, Bluetooth , Zigbee 34 Portable Medical Equipment Other Battery Powered Applications V V IN OUT IN OUT NCP114 C C IN OUT EN 2 1 1 F ON GND Ceramic GND OUT OFF (Bottom View) Figure 1. Typical Application Schematic IN OUT 1 5 GND 2 EN 4 3 N/C (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 15 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: August, 2020 Rev. 30 NCP114/DNCP114 IN ENABLE THERMAL EN LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE DRIVER WITH CURRENT LIMIT OUT AUTO LOW POWER MODE ACTIVE DISCHARGE* EN GND *Active output discharge function is present only in NCP114AMXyyyTCG devices. yyy denotes the particular V option. OUT Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. Pin No. (UDFN4) (TSOP5) Pin Name Description 1 5 OUT Regulated output voltage pin. A small ceramic capacitor with minimum value of 1 F is need- ed from this pin to ground to assure stability. 2 2 GND Power supply ground. 3 3 EN Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into shutdown mode. 4 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. 4 N/C Not connected. This pin can be tied to ground to improve thermal dissipation. EPAD Exposed pad should be connected directly to the GND pin. Soldered to a large ground cop- per plane allows for effective heat removal. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage (Note 1) V 0.3 V to 6 V V IN Output Voltage VOUT 0.3 V to VIN + 0.3 V or 6 V V Enable Input VEN 0.3 V to 6 V V Output Short Circuit Duration tSC s Maximum Junction Temperature T 150 C J(MAX) Storage Temperature T 55 to 150 C STG ESD Capability, Human Body Model (Note 2) ESD 2000 V HBM ESD Capability, Machine Model (Note 2) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22A114, ESD Machine Model tested per EIA/JESD22 A115, Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, UDFN4 1x1 mm R 170 C/W JA Thermal Resistance, JunctiontoAir Thermal Characteristics, TSOP5 R 236 C/W JA Thermal Resistance, JunctiontoAir 2 3. Single component mounted on 1 oz, FR 4 PCB with 645 mm Cu area. www.onsemi.com 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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