Product Information

NCP170ASN250T2G

NCP170ASN250T2G electronic component of ON Semiconductor

Datasheet
LDO Voltage Regulators ULTRA-LOW IQ 150 MA CMOS LDO REGULATOR ACT DISCHARGE VOUT= 2.5V
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7708 ea
Line Total: USD 0.77

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

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NCP170ASN250T2G
ON Semiconductor

3000 : USD 0.2226
6000 : USD 0.2063
15000 : USD 0.1944
30000 : USD 0.1882

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NCP170ASN250T2G
ON Semiconductor

1 : USD 0.5862
10 : USD 0.4671
100 : USD 0.2786
500 : USD 0.2714
1000 : USD 0.2084
3000 : USD 0.1814
9000 : USD 0.1791
24000 : USD 0.1756

0 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NCP170ASN250T2G
ON Semiconductor

1 : USD 1.0367
5 : USD 0.5807
25 : USD 0.3922
55 : USD 0.2849
151 : USD 0.2687

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Polarity
Quiescent Current
Input Voltage MIN
Input Voltage MAX
PSRR / Ripple Rejection - Typ
Output Type
Minimum Operating Temperature
Maximum Operating Temperature
Dropout Voltage
Series
Packaging
Product
Type
Brand
Dropout Voltage - Max
Output Voltage Range
Voltage Regulation Accuracy
Line Regulation
Load Regulation
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

LDO Regulator - UltraLow I , CMOS Q 150 mA NCP170 The NCP170 series of CMOS low dropout regulators are designed specifically for portable battery-powered applications which require www.onsemi.com ultra-low quiescent current. The ultra-low consumption of typ. 500 nA ensures long battery life and dynamic transient boost feature improves device transient response for wireless communication applications. The device is available in small 1 1 mm XDFN4, SOT-563 and 6 5 TSOP-5 packages. 1 1 1 XDFN4 SOT563 TSOP5 Features MX SUFFIX XV SUFFIX SN SUFFIX Operating Input Voltage Range: 2.2 V to 5.5 V CASE 711AJ CASE 463A CASE 483 Output Voltage Range: 1.2 V to 3.6 V (0.1 V Steps) Ultra-Low Quiescent Current Typ. 0.5 A MARKING DIAGRAMS Low Dropout: 170 mV Typ. at 150 mA XDFN4 High Output Voltage Accuracy 1% Stable with Ceramic Capacitors 1 F XX M Over-Current Protection 1 XX = Specific Device Code Thermal Shutdown Protection M = Date Code NCP170A for Active Discharge Option Available in Small 1 1 mm XDFN4, SOT563 and TSOP-5 SOT563 Packages These Devices are PbFree, Halogen Free/BFR Free and are RoHS XX M Compliant 1 XX = Specific Device Code Typical Applications M = Month Code Battery Powered Equipments = Pb-Free Package *Pb-Free indicator, G or microdot , Portable Communication Equipments may or may not be present. Cameras, Image Sensors and Camcorders TSOP5 5 V V IN OUT IN OUT XXXAYW NCP170 C 1 F1EN C F IN OUT 1 GND XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week = PbFree Package Figure 1. Typical Application Schematic (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information on page 22 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2020 Rev. 23 NCP170/DNCP170 PIN FUNCTION DESCRIPTION Pin No. Pin No. Pin No. XDFN4 SOT563 TSOP5 Pin Name Description 4 1 1 IN Power Supply Input Voltage 2 2 2 GND Power Supply Ground 3 6 3 EN Chip Enable Pin (Active H) 1 3 5 OUT Output Pin EPAD EPAD Internally Connected to GND 4 4 NC No Connect 5 GND Power Supply Ground ABSOLUTE MAXIMUM RATINGS Symbol Rating Value Unit V Input Voltage (Note 1) 6.0 V IN V Output Voltage 0.3 to V + 0.3 V OUT IN V Chip Enable Input 0.3 to 6.0 V CE T Maximum Junction Temperature 150 C J(MAX) T Storage Temperature 55 to 150 C STG ESD ESD Capability, Human Body Model (Note 2) 2000 V HBM ESD ESD Capability, Machine Model (Note 2) 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC-Q100-002 (EIA/JESD22-A114) ESD Machine Model tested per AEC-Q100-003 (EIA/JESD22-A115) Latchup Current Maximum Rating tested per JEDEC standard: JESD78 THERMAL CHARACTERISTICS Symbol Rating Value Unit R Thermal Characteristics, Thermal Resistance, Junction-to-Air C/W JA XDFN4 1 1mm 250 SOT563 200 TSOP5 250 Figure 2. Simplified Block Diagram www.onsemi.com 2

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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