Product Information

NCV1413BDR2G

NCV1413BDR2G electronic component of ON Semiconductor

Datasheet
Transistors Darlington High Voltage High Current Darlington

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

22: USD 0.3474 ea
Line Total: USD 7.64

93 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 22  Multiples: 1
Pack Size: 1
Availability Price Quantity
138640 - WHS 1


Ships to you between
Thu. 23 May to Tue. 28 May

MOQ : 286
Multiples : 1

Stock Image

NCV1413BDR2G
ON Semiconductor

286 : USD 0.4241

2406 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 3
Multiples : 1

Stock Image

NCV1413BDR2G
ON Semiconductor

3 : USD 0.6539
25 : USD 0.5902
36 : USD 0.4524
99 : USD 0.4277

93 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 22
Multiples : 1

Stock Image

NCV1413BDR2G
ON Semiconductor

22 : USD 0.3474

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Maximum DC Collector Current
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Category
Brand Category
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MC1413, MC1413B, NCV1413B High Voltage, High Current Darlington Transistor Arrays The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of MC1413, MC1413B, NCV1413B MAXIMUM RATINGS (T = 25C, and rating apply to any one device in the package, unless otherwise noted.) A Rating Symbol Value Unit Output Voltage V 50 V O Input Voltage V 30 V I Collector Current Continuous I 500 mA C Base Current Continuous I 25 mA B Operating Ambient Temperature Range T C A MC1413 20 to +85 MC1413B 40 to +85 NCV1413B 40 to +125 Storage Temperature Range T 55 to +150 C stg Junction Temperature T 150 C J Thermal Resistance, JunctiontoAmbient R C/W JA Case 648, P Suffix 67 Case 751B, D Suffix 100 Thermal Resistance, JunctiontoCase R C/W JC Case 648, P Suffix 22 Case 751B, D Suffix 20 Electrostatic Discharge Sensitivity (ESD) ESD V Human Body Model (HBM) 2000 Machine Model (MM) 400 Charged Device Model (CDM) 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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