NCV8401A, NCV8401B Self-Protected Low Side Driver with Temperature and Current Limit NCV8401A/B is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive V I MAX DSS D (Clamped) R TYP (Limited) environments. DS(ON) 42 V 23 m 10 V 33 A* Features *Max current may be limited below this value Short Circuit Protection depending on input conditions. Thermal Shutdown with Automatic Restart Over Voltage Protection Drain Integrated Clamp for Inductive Switching Overvoltage ESD Protection Gate Protection dV/dt Robustness Input Analog Drive Capability (Logic Level Input) ESD Protection NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Temperature Current Current Qualified and PPAP Capable Limit Limit Sense These Devices are PbFree and are RoHS Compliant Typical Applications Source Switch a Variety of Resistive, Inductive and Capacitive Loads Can Replace Electromechanical Relays and Discrete Circuits MARKING Automotive / Industrial DIAGRAM 1 YWW DPAK NCV 2 CASE 369C xxxxxG STYLE 2 3 Y = Year WW = Work Week 1 = Gate xxxxx = 8401A or 8401B 2 = Drain G = PbFree Package 3 = Source ORDERING INFORMATION Device Package Shipping NCV8401ADTRKG DPAK 2500/Tape & Reel (PbFree) NCV8401BDTRKG DPAK 2500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2017 Rev. 13 NCV8401/DNCV8401A, NCV8401B MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage Internally Clamped V 42 V DSS DraintoGate Voltage Internally Clamped (R = 1.0 M ) V 42 V DGR GS GatetoSource Voltage V 14 V GS Drain Current Continuous I Internally Limited D Total Power Dissipation P W D T = 25C (Note 1) 1.1 A T = 25C (Note 2) 2.0 A Thermal Resistance, JunctiontoCase R 1.6 C/W JC JunctiontoAmbient (Note 1) 110 R JA JunctiontoAmbient (Note 2) 60 R JA Single Pulse DraintoSource Avalanche Energy E 800 mJ AS (V = 25 Vdc, V = 5.0 Vdc, I = 3.65 Apk, L = 120 mH, R = 25 , T = 150C) (Note 3) DD GS L G Jstart Load Dump Voltage (V = 0 and 10 V, R = 2.0 , R = 3.0 , t = 400 ms) V 65 V GS I L d LD Operating Junction Temperature T 40 to 150 C J Storage Temperature T 55 to 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2 square FR4 board (1 square, 2 oz. Cu 0.06 thick singlesided, t = steady state). 3. Not subject to production testing. + I D DRAIN I G VDS GATE + SOURCE VGS Figure 1. Voltage and Current Convention www.onsemi.com 2