Product Information

NCV8664ST33T3G

NCV8664ST33T3G electronic component of ON Semiconductor

Datasheet
LDO Regulator Pos 3.3V 0.15A Automotive 4-Pin(3+Tab) SOT-223 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

681: USD 0.6581 ea
Line Total: USD 448.17

0 - Global Stock
MOQ: 681  Multiples: 681
Pack Size: 681
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 681
Multiples : 681

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NCV8664ST33T3G
ON Semiconductor

681 : USD 0.6378

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 12
Multiples : 1

Stock Image

NCV8664ST33T3G
ON Semiconductor

12 : USD 0.7298

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 12
Multiples : 1

Stock Image

NCV8664ST33T3G
ON Semiconductor

12 : USD 0.618

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Input Voltage MIN
Input Voltage MAX
Output Type
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Voltage Regulation Accuracy
Ib - Input Bias Current
Line Regulation
Load Regulation
Reference Voltage
Factory Pack Quantity :
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NCV8664 Very Low I Low Dropout q Linear Regulator The NCV8664 is a precision 3.3 V and 5.0 V fixed output, low dropout integrated voltage regulator with an output current capability of 150 mA. Careful management of light load current NCV8664 IN OUT Bias Current Generators 1.3 V + Reference Error Amp - Thermal Shutdown GND Figure 1. Block Diagram PIN FUNCTION DESCRIPTION Pin No. DPAK/SOT223 SOIC8 Symbol Function 1 2 V Unregulated input voltage 4.5 V to 45 V. IN 2 3 GND Ground substrate. 3 4 V Regulated output voltage collector of the internal PNP pass transistor. OUT TAB GND Ground substrate and best thermal connection to the die. 1, 58 NC No Connection. OPERATING RANGE Pin Symbol, Parameter Symbol Min Max Unit V 4.5 +45 V V , DC Input Operating Voltage IN IN Junction Temperature Operating Range T 40 +150 C J MAXIMUM RATINGS Rating Symbol Min Max Unit V 42 +45 V V , DC Voltage IN IN V , DC Voltage V 0.3 +18 V OUT OUT Storage Temperature T 55 +150 C stg ESD Capability, Human Body Model (Note 1) V 4000 V ESDHB ESD Capability, Machine Model (Note 1) V 200 V ESDMIM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device series incorporates ESD protection and is tested by the following methods: ESD HBM tested per AECQ100002 (EIA/JESD22A 114C) ESD MM tested per AECQ100003 (EIA/JESD22A 115C) THERMAL RESISTANCE Parameter Symbol Condition Min Max Unit Junction toAmbient DPAK R 101 (Note 2) C/W JA SOT223 99 (Note 2) SOIC8 Fused 145 Junction toCase DPAK R 9.0 C/W JC SOT223 17 SOIC8 Fused 2 2. 1 oz., 100 mm copper area.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
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