NCV887720BSTGEVB ON Semiconductor

DATA SHEET www.onsemi.com Automotive Grade Start-Stop Non-Synchronous 8 1 Boost Controller SOIC8 D SUFFIX CASE 751 NCV8877 STYLE N/A The NCV8877 is a Non-Synchronous Boost controller designed to supply a minimum output voltage during Start-Stop vehicle operation MARKING DIAGRAM battery voltage sags. The controller drives an external N-channel 8 MOSFET. The device uses peak current mode control with internal 8877xxG slope compensation. The IC incorporates an internal regulator that ALYW supplies charge to the gate driver. Protection features include, cycle-by-cycle current limiting and 1 thermal shutdown. Additional features include low quiescent current sleep mode 8877xxG= Specific Device Code xx = 01, 11, 20, operation. The NCV8877 is enabled when the supply voltage drops A = Assembly Location below the wake up threshold. Boost Operation is initiated when the L = Wafer Lot supply voltage drops below the regulation set point. Y = Year W = Work Week Features = PbFree Package Automatic Enable Below Wake Up Threshold Voltage (Factory Programmable) PIN CONNECTIONS Override Disable Function Boost Mode Operation at Regulation Set Point DISB 1 8 ROSC 2% Output Accuracy Over Temperature Range ISNS 2 7 VC Peak Current Mode Control with Internal Slope Compensation GND 3 6 VOUT Externally Adjustable Frequency Operation GDRV 4 5 VDRV Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump Low Quiescent Current in Sleep Mode (<12 A Typical) (Top View) CyclebyCycle Current Limit Protection HiccupMode Overcurrent Protection (OCP) ORDERING INFORMATION Thermal Shutdown (TSD) Device Package Shipping This is a PbFree Device NCV887701D1R2G NCV Prefix for Automotive and Other Applications Requiring SOIC8 2500 / Tape & Unique Site and Control Change Requirements AECQ100 NCV887711D1R2G (PbFree) Reel NCV887720D1R2G Typical Applications Applications Requiring Regulated Voltage through Cranking and For information on tape and reel specifications, StartStop Operation including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2021 Rev. 11 NCV8877/DNCV8877 BATTERY LP NRVB440MFS VOUT IN Co DB Cg DISABLE Q DISB VDRV GDRV NVMFS5844NL CDRV ISNS ROSC RSNS ROSC VOUT VC GND RC CC Figure 1. Typical Application Battery In Sleep Threshold Wake Up Threshold VOUT Regulation (Internal signal) Wakeup Internal Clamp DISB Voltage COMP GDRV Wake Up Delay GDRV Switching Delay Figure 2. Functional Waveforms PACKAGE PIN DESCRIPTIONS Pin Pin No. Symbol Function 1 DISB Disable input. This part is disabled when this pin is brought low. 2 ISNS Current sense input. Connect this pin to the source of the external NMOSFET, through a currentsense res- istor to ground to sense the switching current for regulation and current limiting. 3 GND Ground reference. 4 GDRV Gate driver output. Connect to gate of the external N MOSFET. A series resistance can be added from GDRV to the gate to tailor EMC performance. 5 VDRV Driving voltage. Internally regulated supply for driving the external N MOSFET, sourced from VOUT. Bypass with a 1.0 F ceramic capacitor to ground. 6 VOUT Monitors output voltage and provides IC input voltage. 7 VC Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is used to stabilize the converter. 8 ROSC Use a resistor to ground to set the frequency. www.onsemi.com 2