NL17SG34DFT2G ON Semiconductor

D M NL17SG34 Single Buffer The NL17SG34 MiniGate is an advanced highspeed CMOS Buffer in ultrasmall footprint. The NL17SG34 input structures provides protection when voltages up to 4.6 V are applied. NL17SG34 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +5.5 V CC V DC Input Voltage 0.5 to +4.6 V IN V DC Output Voltage Output at High or Low State 0.5 to V +0.5 V OUT CC PowerDown Mode (V = 0 V) 0.5 to +4.6 CC I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 20 mA OUT I DC Supply Current per Supply Pin 20 mA CC I DC Ground Current per Ground Pin 20 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD Machine Model (Note 3) >100 I Latchup Performance Above V and Below GND at 125C (Note 4) 100 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V Positive DC Supply Voltage 0.9 3.6 V CC V Digital Input Voltage 0.0 3.6 V IN V Output Voltage Output at High or Low State 0.0 V V OUT CC PowerDown Mode (V = 0 V) 0.0 3.6 CC T Operating Temperature Range 55 +125 C A Input Transition Rise or Fail Rate V = 3.3 V 0.3 V 0 10 ns/V t / V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.