NLSF302 Quad 2Input NOR Gate The NLSF302 is an advanced high speed CMOS 2input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer Y4 B3 V A3 CC Y1 GND A1 B2 NLSF302 16 15 14 13 B1 B4 12 1 16 NLSF302 A1 NC 11 NC 2 15 MN Package Y1 1 B1 4 Y2 A4 10 3 (Top View) A2 3 Y2 5 B2 Y = A + B A2 Y3 9 4 7 A3 9 Y3 8 B3 56 7 8 10 A4 13 Y4 12 B4 Figure 1. LOGIC DIAGRAM Figure 2. PIN ASSIGNMENT (QFN16) MAXIMUM RATINGS Parameter Symbol Value Unit This device contains protection circuitry to guard against damage DC Supply Voltage V 0.5 to + 7.0 V CC due to high static voltages or electric DC Input Voltage V 0.5 to + 7.0 V fields. However, precautions must in be taken to avoid applications of any DC Output Voltage V 0.5 to V + 0.5 V out CC voltage higher than maximum rated Input Diode Current I 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in Output Diode Current I 20 mA OK V should be constrained to the out range GND (V or V ) V . DC Output Current, per Pin I 25 mA out in out CC Unused inputs must always be DC Supply Current, V and GND Pins I 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). Power Dissipation in Still Air P 450 mW CC D Unused outputs must be left open. Storage Temperature T 65 to + 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage V 2.0 5.5 V CC DC Input Voltage V 0 5.5 V in DC Output Voltage V 0 V V out CC Operating Temperature T 40 +85 C A Input Rise and Fall Time V = 3.3 V 0.3 V t , t 0 100 ns/V CC r f V =5.0 V 0.5 V 0 20 CC