NLX1G11 3-Input AND Gate The NLX1G11 is an advanced highspeed 3input CMOS AND gate in ultrasmall footprint. The NLX1G11 input structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. Features www.onsemi.com High Speed: t = 2.4 ns (Typ) V = 5.0 V PD CC Designed for 1.65 V to 5.5 V V Operation CC Low Power Dissipation: I = 1 A (Max) at T = 25C CC A MARKING 24 mA Balanced Output Source and Sink Capability DIAGRAMS Balanced Propagation Delays UDFN6 M Overvoltage Tolerant (OVT) Input Pins 1.0 x 1.0 CASE 517BX UltraSmall Packages 1 NLV Prefix for Automotive and Other Applications Requiring UDFN6 Unique Site and Control Change Requirements AECQ101 X M 1.2 x 1.0 Qualified and PPAP Capable CASE 517AA These are PbFree Devices 1 UDFN6 M 1.45 x 1.0 A 1 6 C CASE 517AQ 1 X = Device Marking GND 2 5 V CC M = Date Code = PbFree Package A B & Y B 3 4 Y C ORDERING INFORMATION See detailed ordering and shipping information in the package Figure 1. Pinout (Top View) Figure 2. Logic Symbol dimensions section on page 4 of this data sheet. PIN ASSIGNMENT Pin Function 1 A 2 GND 3B 4 Y 5V CC 6C FUNCTION TABLE Input Output AB CY L X X L X L X L X X L L H H H H H HIGH Logic Level L LOW Logic Level X = Either LOW or HIGH Logic Level Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 5 NLX1G11/D E PNLX1G11 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA O I DC Supply Current per Supply Pin 100 mA CC I DC Ground Current per Ground Pin 100 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J Thermal Resistance (Note 1) 496 C/W JA P Power Dissipation in Still Air 85C 252 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) >2000 V ESD Machine Model (Note 3) >200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125 C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage Operating 1.65 5.5 V CC Data Retention Only 1.5 5.5 V Digital Input Voltage (Note 6) 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 1.8 V 0.15 V 0 20 ns/V CC V = 2.5 V 0.2 V 0 20 CC V = 3.3 V 0.3 V 0 10 CC V = 5.0 V 0.5 V 0 5 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 6. Unused inputs may not be left open. All inputs must be tied to a high or lowlogic input voltage level. www.onsemi.com 2