NLX3G14AMX1TCG ON Semiconductor

NLX3G14 Triple Schmitt-Trigger Inverter The NLX3G14 MiniGate is an advanced highspeed CMOS triple Schmitttrigger inverter in ultrasmall footprint. The NLX3G14 input and output structures provide protection when NLX3G14 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND 50 mA OK OUT I DC Output Source/Sink Current 50 mA O I DC Supply Current Per Supply Pin 100 mA CC I DC Ground Current per Ground Pin 100 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22A114A. 3. Tested to EIA / JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 2.5 V 0.2 V 0 No Limit ns/V CC V = 3.3 V 0.3 V 0 No Limit CC V = 5.0 V 0.5 V 0 No Limit CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.