Product Information

NP0080TAT1G

NP0080TAT1G electronic component of ON Semiconductor

Datasheet
Thyristor Surge Protection Devices - TSPD TSPD GEN II 8-16V TSOP-5
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

NP0080TAT1G
ON Semiconductor

1 : USD 0.6933
10 : USD 0.5738
100 : USD 0.3697
1000 : USD 0.2964
3000 : USD 0.2533
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

NP0080TAT1G
ON Semiconductor

1 : USD 0.6999
10 : USD 0.58
100 : USD 0.3735
1000 : USD 0.3146
3000 : USD 0.2881
9000 : USD 0.2881
24000 : USD 0.2772
45000 : USD 0.2736
99000 : USD 0.2663
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Breakdown Voltage
Capacitance
Operating Temperature Range
Operating Voltage
Series
Termination Style
Brand
Channels
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

NP0080TA Series Low Capacitance Protector The NP series of low voltage/low capacitance overvoltage protection devices protect high speed xDSL line drivers and chipsets from both Lightning Surge and ESD events. The devices are designed with a low nominal capacitance as well as extremely low differential capacitance across frequency and voltage. The inherent low offstate NP0080TA Series ELECTRICAL CHARACTERISTICS TABLE (T = 25C unless otherwise noted) A Symbol Rating Min Typ Max Unit V Repetitive peak offstate voltage: Rated maximum NP0080TAT1G 8 V RWM (peak) continuous voltage that may be applied in the NP0120TAT1G 12 offstate condition V Breakdown Voltage: The minimum voltage across the V NP0080TAT1G 9.5 BR1 device in or at the breakdown region. Measured at NP0120TAT1G 12.5 I = 1 mA BR V Breakover Voltage: The maximum voltage across the NP0080TAT1G 20 V (BO) device in or at the breakover region. Measured at NP0120TAT1G 30 I = 800 mA (BO) I Offstate Current: The dc value of current that results 0.5 A R from the application of the offstate voltage I Holding Current: The minimum current required to 50 mA H maintain the device in the on state. Co OffState Capacitance: f = 1.0 MHz, V = 1.0 Vrms, pF NP0080TAT1G 13 d V = 2 Vdc D NP0120TAT1G 13 C Capacitance: f = 1.0 MHz, V = 1.0 Vrms, NP0080TAT1G 4 pF 1 d V = 0 V Vrwm D NP0120TAT1G 3 IPPS Peak Pulse Current: Rated maximum value of peak 50 A impulse pulse current that may be applied. 8x20 s, IEC 61000 4 5 ESD Electrostatic Discharge (CONTACT): NP0080TAT1G 8 kV Rated maximum value of ESD per IEC6100042 NP0120TAT1G 6 Electrostatic Discharge (AIR): 15 Rated maximum value of ESD per IEC6100042 T Storage Temperature Range 55 +150 C STG T Operating Junction Temperature Range 40 +125 C J

HS Compliance

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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