NP0080TAT1G ON Semiconductor

NP0080TA Series Low Capacitance Protector The NP series of low voltage/low capacitance overvoltage protection devices protect high speed xDSL line drivers and chipsets from both Lightning Surge and ESD events. The devices are designed with a low nominal capacitance as well as extremely low differential capacitance across frequency and voltage. The inherent low offstate NP0080TA Series ELECTRICAL CHARACTERISTICS TABLE (T = 25C unless otherwise noted) A Symbol Rating Min Typ Max Unit V Repetitive peak offstate voltage: Rated maximum NP0080TAT1G 8 V RWM (peak) continuous voltage that may be applied in the NP0120TAT1G 12 offstate condition V Breakdown Voltage: The minimum voltage across the V NP0080TAT1G 9.5 BR1 device in or at the breakdown region. Measured at NP0120TAT1G 12.5 I = 1 mA BR V Breakover Voltage: The maximum voltage across the NP0080TAT1G 20 V (BO) device in or at the breakover region. Measured at NP0120TAT1G 30 I = 800 mA (BO) I Offstate Current: The dc value of current that results 0.5 A R from the application of the offstate voltage I Holding Current: The minimum current required to 50 mA H maintain the device in the on state. Co OffState Capacitance: f = 1.0 MHz, V = 1.0 Vrms, pF NP0080TAT1G 13 d V = 2 Vdc D NP0120TAT1G 13 C Capacitance: f = 1.0 MHz, V = 1.0 Vrms, NP0080TAT1G 4 pF 1 d V = 0 V Vrwm D NP0120TAT1G 3 IPPS Peak Pulse Current: Rated maximum value of peak 50 A impulse pulse current that may be applied. 8x20 s, IEC 61000 4 5 ESD Electrostatic Discharge (CONTACT): NP0080TAT1G 8 kV Rated maximum value of ESD per IEC6100042 NP0120TAT1G 6 Electrostatic Discharge (AIR): 15 Rated maximum value of ESD per IEC6100042 T Storage Temperature Range 55 +150 C STG T Operating Junction Temperature Range 40 +125 C J