Product Information

NRVB2045EMFST1G

NRVB2045EMFST1G electronic component of ON Semiconductor

Datasheet
Diode Switching 45V 20A Automotive 5-Pin(4+Tab) SO-FL T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0 - WHS 1

MOQ : 1
Multiples : 1

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NRVB2045EMFST1G
ON Semiconductor

1 : USD 4.023
10 : USD 1.5187
100 : USD 1.134
500 : USD 0.9342
1000 : USD 0.7377
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0 - WHS 2

MOQ : 1
Multiples : 1

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NRVB2045EMFST1G
ON Semiconductor

1 : USD 1.4384
5 : USD 1.2891
17 : USD 0.977
45 : USD 0.9227
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0 - WHS 3

MOQ : 1500
Multiples : 1500

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NRVB2045EMFST1G
ON Semiconductor

1500 : USD 0.7423
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Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Classification
Operating Temp Range
Pin Count
Peak Rep Rev Volt
Package Type
Rad Hardened
Peak Non-Repetitive Surge Current
Rev Curr
Rectifier Type
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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MBR2045EMFS, NRVB2045EMFS Switch-mode Power Rectifiers These stateoftheart devices have the following features: MBR2045EMFS, NRVB2045EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V 45 R Average Rectified Forward Current I 20 A F(AV) (Rated V , T = 130C) R C Peak Repetitive Forward Current, I 40 A FRM (Rated V , Square Wave, 20 kHz, T = 120C) R C NonRepetitive Peak Surge Current I 400 A FSM (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage Temperature Range T 65 to +175 C stg Operating Junction Temperature T 55 to +150 C J Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive) E 150 mJ AS ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Thermal Resistance, JunctiontoCase, Steady State R 1.6 C/W JC 2 (Assumes 600 mm 1 oz. copper bond pad, on a FR4 board) ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) v V F (i = 10 A, T = 125C) 0.35 0.47 F J (i = 10 A, T = 25C) 0.45 0.56 F J (i = 20 A, T = 125C) 0.43 0.58 F J (i = 20 A, T = 25C) 0.51 0.64 F J Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 125C) 48 100 J (Rated dc Voltage, T = 25C) 0.09 0.40 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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