X-On Electronics has gained recognition as a prominent supplier of NSBC143ZDP6T5G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSBC143ZDP6T5G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSBC143ZDP6T5G ON Semiconductor

NSBC143ZDP6T5G electronic component of ON Semiconductor
NSBC143ZDP6T5G ON Semiconductor
NSBC143ZDP6T5G Bipolar Transistors - Pre-Biased
NSBC143ZDP6T5G  Semiconductors

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See Product Specifications
Part No. NSBC143ZDP6T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: ON Semiconductor Bipolar Transistors - Pre-Biased DUAL NBRT
Datasheet: NSBC143ZDP6T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5242 ea
Line Total: USD 0.52 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 8000
Multiples : 8000
8000 : USD 0.1391
16000 : USD 0.1389
24000 : USD 0.1385
40000 : USD 0.1382
48000 : USD 0.138
200000 : USD 0.1377
400000 : USD 0.1374
1000000 : USD 0.137
2000000 : USD 0.1366

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 8000
Multiples : 8000
8000 : USD 0.1073

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 3969
Multiples : 1
3969 : USD 0.0796

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 1
Multiples : 1
1 : USD 0.5242
10 : USD 0.3202
100 : USD 0.145
1000 : USD 0.1079
2500 : USD 0.084
8000 : USD 0.067
24000 : USD 0.0625
48000 : USD 0.0614

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 8000
Multiples : 8000
8000 : USD 0.1098

   
Manufacturer
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RoHS - XON
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Pd - Power Dissipation
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We are delighted to provide the NSBC143ZDP6T5G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSBC143ZDP6T5G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 Dual NPN Bias Resistor Transistors www.onsemi.com R1 = 4.7 k , R2 = 47 k NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R 1 R 2 Transistor (BRT) contains a single transistor with a monolithic bias Q network consisting of two resistors a series base resistor and a 1 base-emitter resistor. The BRT eliminates these individual Q 2 components by integrating them into a single device. The use of a BRT R can reduce both system cost and board space. 2 R 1 Features (4) (5) (6) Simplifies Circuit Design Reduces Board Space MARKING DIAGRAMS Reduces Component Count S and NSV Prefix for Automotive and Other Applications 6 Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable SOT363 7K M CASE 419B These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (T = 25C, common for Q and Q , unless otherwise noted) A 1 2 SOT563 7K M Rating Symbol Max Unit CASE 463A 1 Collector-Base Voltage V 50 Vdc CBO Collector-Emitter Voltage V 50 Vdc CEO Collector Current Continuous I 100 mAdc C SOT963 Y M Input Forward Voltage V 30 Vdc CASE 527AD IN(fwd) 1 Input Reverse Voltage V 5 Vdc IN(rev) Stresses exceeding those listed in the Maximum Ratings table may damage the 7K/Y = Specific Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. = Pb-Free Package ORDERING INFORMATION (Note: Microdot may be in either location) Device Package Shipping *Date Code orientation may vary depending upon manufacturing location. MUN5233DW1T1G, SOT363 3,000/Tape & Reel SMUN5233DW1T1G NSBC143ZDXV6T1G, SOT563 4,000/Tape & Reel NSVBC143ZDXV6T1G NSBC143ZDXV6T5G SOT563 8,000/Tape & Reel NSBC143ZDP6T5G SOT963 8,000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2018 Rev. 3 DTC143ZD/DMUN5233DW1, NSBC143ZDXV6, NSBC143ZDP6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MUN5233DW1 (SOT363) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 187 mW A (Note 2) 256 Derate above 25C (Note 1) 1.5 mW/C (Note 2) 2.0 Thermal Resistance, (Note 1) R 670 C/W JA Junction to Ambient (Note 2) 490 MUN5233DW1 (SOT363) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 250 mW A (Note 2) 385 Derate above 25C (Note 1) 2.0 mW/C (Note 2) 3.0 Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 493 (Note 2) 325 Thermal Resistance, R C/W JL Junction to Lead (Note 1) 188 (Note 2) 208 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZDXV6 (SOT563) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 1) 357 mW A Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 350 NSBC143ZDXV6 (SOT563) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 1) 500 mW A Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, R C/W JA Junction to Ambient (Note 1) 250 Junction and Storage Temperature Range T , T 55 to +150 C J stg NSBC143ZDP6 (SOT963) ONE JUNCTION HEATED Total Device Dissipation P D T = 25C (Note 4) 231 MW A (Note 5) 269 Derate above 25C (Note 4) 1.9 mW/C (Note 5) 2.2 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 540 (Note 5) 464 NSBC143ZDP6 (SOT963) BOTH JUNCTION HEATED (Note 3) Total Device Dissipation P D T = 25C (Note 4) 339 MW A (Note 5) 408 Derate above 25C (Note 4) 2.7 mW/C (Note 5) 3.3 Thermal Resistance, R C/W JA Junction to Ambient (Note 4) 369 (Note 5) 306 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 1.0 Inch Pad. 3. Both junction heated values assume total power is sum of two equally powered channels. 2 4. FR4 100 mm , 1 oz. copper traces, still air. 2 5. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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