NSP8814, NSP8818 ESD and Surge Protection Device Low Capacitance Surge Protection for High Speed Data www.onsemi.com The NSP8814 and NSP8818 surge protectors are designed specifically to protect 10/100 and GbE Ethernet signals from high MARKING levels of surge current. Low clamping voltage under high surge DIAGRAMS conditions make this device an ideal solution for protecting voltage sensitive lines leading to Ethernet transceiver chips. Low capacitance 4C M combined with flow-through style packaging allows for easy PCB UDFN8 layout and matched trace lengths necessary to maintain consistent CASES 506CV impedance between high-speed differential lines. Features Protection for the Following IEC Standards: 4D M IEC 6100042 (ESD) 30 kV (Contact) IEC 6100045 (Lightning) 35 A (8/20 s) UDFN10 FlowThru Routing Scheme CASE 506CU Low Capacitance: 2 pF Max (I/O to I/O) UL Flammability Rating of 94 V0 XX = Specific Device Code M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS = PbFree Package Compliant Typical Applications ORDERING INFORMATION 10/100 and GbE Ethernet MagJacks / Integrated Magnetics Device Package Shipping Notebooks/Desktops/Servers NSP8814MUTAG UDFN8 3000 / Tape & Reel (PbFree) MAXIMUM RATINGS (T = 25C unless otherwise noted) J NSP8818MUTAG UDFN10 3000 / Tape & Reel Rating Symbol Value Unit (PbFree) Operating Junction Temperature Range T 55 to +125 C J For information on tape and reel specifications, including part orientation and tape sizes, please Storage Temperature Range T 55 to +150 C stg refer to our Tape and Reel Packaging Specification Lead Solder Temperature T 260 C Brochure, BRD8011/D. L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 30 kV IEC 6100042 Air (ESD) 30 Maximum Peak Pulse Current I A PP 35 8/20 s T = 25C A 20 10/700 s T = 25C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 5 NSP8814/DNSP8814, NSP8818 NSP8814 Pin2Pin3 Pin6 Pin7 GND GND GND I/O I/O I/O I/O GND GND GND Pins 1, 4, 5, 8 Note: Common GND Only minimum of 1 GND connection required NSP8818 GND Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10 I/O I/O = I/O I/O GND GND GND Pins 3, 8 I/O I/O Note: Common GND Only minimum of 1 GND connection required I/O I/O GND Figure 1. Pin Schematic ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter V Working Peak Voltage R RWM DYN I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I V V V BR T CL BR RWM V I R V I Test Current CL T I T V Holding Reverse Voltage HOLD I Holding Reverse Current R HOLD DYN R Dynamic Resistance DYN I Maximum Peak Pulse Current I PP PP V Clamping Voltage I UniDirectional Surge Protection C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V Any I/O to GND (Note 1) 3.0 V RWM Forward Voltage V I = 10 mA, GND to All IO Pins 0.5 0.85 1.1 V F F Breakdown Voltage V I = 1 mA, I/O to GND 3.2 3.5 5.0 V BR T Reverse Leakage Current I V = 3.0 V, I/O to GND 0.5 A R RWM Clamping Voltage (Note 2) V I = 1 A 4.0 5.0 V C PP I = 10 A 6.0 6.5 PP I = 25 A 8.0 10 PP I = 35 A 10 15 PP Clamping Voltage V IEC6100042, 8 kV Contact See Figures 7 and 14 V C Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins 1.5 2.0 pF J R V = 0 V, f = 1 MHz between I/O Pins and GND 5.0 R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 2. Any I/O to GND (8/20 s pulse). www.onsemi.com 2