NSTB1002DXV5T1G ON Semiconductor

NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V 40 Vdc (BR)CEO CollectorBase Breakdown Voltage V 40 Vdc (BR)CBO EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO Base Cutoff Current I 50 nAdc BL Collector Cutoff Current I 50 nAdc CEX ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 250 MHz T Output Capacitance C 4.5 pF obo Input Capacitance C 10.0 pF ibo Input Impedance h 2.0 12 k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C 4 Voltage Feedback Ratio h 0.1 10 X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C SmallSignal Current Gain h 100 400 fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C Output Admittance h 3.0 60 mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C Noise Figure nF 4.0 dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 225 CC C s ns Fall Time (I = I = 1.0 mAdc) t 75 B1 B2 f Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current I 100 nAdc CBO (V = 50 V, I = 0) CB E Collector-Emitter Cutoff Current I 500 nAdc CEO (V = 50 V, I = 0) CB B Emitter-Base Cutoff Current I 0.1 mAdc EBO (V = 6.0, I = 5.0 mA) EB C 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.