X-On Electronics has gained recognition as a prominent supplier of NSTB1002DXV5T1G Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. NSTB1002DXV5T1G Bipolar Transistors - Pre-Biased are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

NSTB1002DXV5T1G ON Semiconductor

NSTB1002DXV5T1G electronic component of ON Semiconductor
NSTB1002DXV5T1G ON Semiconductor
NSTB1002DXV5T1G Bipolar Transistors - Pre-Biased
NSTB1002DXV5T1G  Semiconductors

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See Product Specifications
Part No. NSTB1002DXV5T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - Pre-Biased
Description: ON Semiconductor Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Datasheet: NSTB1002DXV5T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4656: USD 0.0903 ea
Line Total: USD 420.44 
Availability - 0
MOQ: 4656  Multiples: 4656
Pack Size: 4656
Availability Price Quantity
0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 4000
Multiples : 4000
4000 : USD 0.1234
8000 : USD 0.1221
12000 : USD 0.1209
20000 : USD 0.1198
24000 : USD 0.1185
40000 : USD 0.1174
100000 : USD 0.1161
200000 : USD 0.115
500000 : USD 0.1139

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 4656
Multiples : 4656
4656 : USD 0.0903

0
Ship by Wed. 02 Jul to Fri. 04 Jul
MOQ : 8000
Multiples : 8000
8000 : USD 0.118
24000 : USD 0.1155
48000 : USD 0.1142
100000 : USD 0.1104

0
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 8000
Multiples : 8000
8000 : USD 0.1124

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
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Pd - Power Dissipation
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We are delighted to provide the NSTB1002DXV5T1G from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSTB1002DXV5T1G and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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NSTB1002DXV5T1G, NSTB1002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NSTB1002DXV5T1G, NSTB1002DXV5T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V 40 Vdc (BR)CEO CollectorBase Breakdown Voltage V 40 Vdc (BR)CBO EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO Base Cutoff Current I 50 nAdc BL Collector Cutoff Current I 50 nAdc CEX ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 250 MHz T Output Capacitance C 4.5 pF obo Input Capacitance C 10.0 pF ibo Input Impedance h 2.0 12 k ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C 4 Voltage Feedback Ratio h 0.1 10 X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C SmallSignal Current Gain h 100 400 fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C Output Admittance h 3.0 60 mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) CE C Noise Figure nF 4.0 dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time (V = 3.0 Vdc, V = 0.5 Vdc) t 35 CC BE d ns Rise Time (I = 10 mAdc, I = 1.0 mAdc) t 35 C B1 r Storage Time (V = 3.0 Vdc, I = 10 mAdc) t 225 CC C s ns Fall Time (I = I = 1.0 mAdc) t 75 B1 B2 f Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current I 100 nAdc CBO (V = 50 V, I = 0) CB E Collector-Emitter Cutoff Current I 500 nAdc CEO (V = 50 V, I = 0) CB B Emitter-Base Cutoff Current I 0.1 mAdc EBO (V = 6.0, I = 5.0 mA) EB C 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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