BAV70T, NSVBAV70T Dual Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 MAXIMUM RATINGS (T = 25C) A ANODE Rating Symbol Max Unit MARKING Reverse Voltage V 100 Vdc R DIAGRAM Forward Current I 200 mAdc F 3 Peak Forward Surge Current I 500 mAdc FM(surge) CASE 463 A4 M SOT416/SC75 THERMAL CHARACTERISTICS 2 STYLE 3 1 Characteristic Symbol Max Unit 1 Total Device Dissipation, P D FR4 Board (Note 1) 225 mW A4 = Specific Device Code T = 25C A M = Date Code Derated above 25C 1.8 mW/C = PbFree Package Thermal Resistance, R 555 C/W JA Junction to Ambient (Note 1) ORDERING INFORMATION Total Device Dissipation, P D Device Package Shipping FR4 Board (Note 2) 360 mW T = 25C A BAV70TT1G SOT416 3000 / Tape & Derated above 25C 2.9 mW/C (Pb-Free) Reel Thermal Resistance, R 345 C/W JA NSVBAV70TT1G SOT416 3000 / Tape & JunctiontoAmbient (Note 2) (Pb-Free) Reel Junction and Storage T , T 55 to C J stg NSVBAV70TT3G SOT416 10000 / Tape & Temperature Range +150 (Pb-Free) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specifications 1. FR4 Minimum Pad Brochure, BRD8011/D. 2. FR4 1.0 1.0 Inch Pad Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 6 BAV70TT1/DBAV70T, NSVBAV70T ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) (BR) Reverse Voltage Leakage Current (Note 3) (V = 100 Vdc) I 1.0 Adc R R (V = 50 Vdc) I 100 nAdc R R Diode Capacitance C 1.5 pF D (V = 0, f = 1.0 MHz) R Forward Voltage V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 100 , I = 1.0 mAdc) (Figure 1) F R L R(REC) Forward Recovery Voltage V 1.75 V RF (I = 10 mAdc, t = 20 ns) (Figure 2) F r 3. For each individual diode while the second diode is unbiased. www.onsemi.com 2