NTJS3157N MOSFET Power, Single, N-Channel, Trench, SC-88 20 V, 4.0 A Features NTJS3157N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 12 mV/C (BR)DSS J V = 0 V, I = 250 A GS D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 16 V DS T = 85C 5.0 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V 0.40 1.0 V GS(TH) V = V , I = 250 A Negative Threshold Temperature V /T GS DS D 4.0 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V, I = 4.0 A 45 60 DS(on) GS D m V = 2.5 V, I = 3.6 A 55 70 GS D V = 1.8 V, I = 2.0 A 70 85 GS D Forward Transconductance g V = 10 V, I = 3.2 A 9.0 S FS GS D CHARGES AND CAPACITANCES Input Capacitance C 500 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 75 OSS V = 10 V DS Reverse Transfer Capacitance C 60 RSS Total Gate Charge Q 6.9 15 nC G(TOT) V = 4.5 V, V = 10 V, GS DS GatetoSource Charge Q 1.0 GS I = 3.2 A D GatetoDrain Charge Q 1.8 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 6.0 15 ns d(on) Rise Time t 12 25 r V = 4.5 V, V = 10 V, GS DD I = 0.5 A, R = 6.0 D G TurnOff Delay Time t 21 45 d(off) Fall Time t 11 25 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V =0 V, T = 25C 0.7 1.0 V SD GS J I = 1.6 A S Reverse Recovery Time t 15 ns RR Charge Time T 12 a V = 0 V, dI /dt = 100 A/ s, GS S I = 1.6 A S Discharge Time T 3.0 b Reverse Recovery Charge Q 5.0 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.