NTMFD4901NF MOSFET Power, Dual, N-Channel with Integrated Schottky, SO8FL 30 V, High Side 18 A / Low Side 30 A NTMFD4901NF MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage Q1 V 30 V DSS DraintoSource Voltage Q2 V 20 V GatetoSource Voltage Q1 GS GatetoSource Voltage Q2 Continuous Drain Current R (Note 1) T = 25C Q1 I 13.5 JA A D T = 85C 9.7 A A T = 25C Q2 23.4 A T = 85C 16.9 A Power Dissipation R (Note 1) T = 25C Q1 P 1.90 W JA A D Q2 2.07 Continuous Drain Current R 10 s (Note 1) T = 25C Q1 I 18.2 JA A D T = 85C 13.1 A A T = 25C Q2 30.3 A Steady State T = 85C 21.8 A Power Dissipation R 10 s (Note 1) T = 25C Q1 P 3.45 W JA A D Q2 3.45 Continuous Drain Current R (Note 2) T = 25C Q1 I 10.3 JA A D T = 85C 7.4 A A T = 25C Q2 17.9 A T = 85C 12.9 A Power Dissipation R (Note 2) T = 25 C Q1 P 1.10 W JA A D Q2 1.20 Pulsed Drain Current T = 25C Q1 I 60 A A DM t = 10 s p Q2 100 Operating Junction and Storage Temperature T , T 55 to +150 C Q1 J STG Q2 Source Current (Body Diode) Q1 I 3.4 A S Q2 4.9 Drain to Source dV/dt dV/dt 6 V/ns Single Pulse DraintoSource Avalanche Energy (T = 25C, V 24 A Q1 EAS 28.8 mJ J DD = 50 V, V = 10 V, I = XX A , L = 0.1 mH, R = 25 ) GS L pk G 48 A Q2 EAS 115 Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm .